STMicroelectronics
STH2N120K5-2AG
Single FETs, MOSFETs
STH2N120K5-2AG
278-STH2N120K5-2AG
STMicroelectronics-STH2N120K5-2AG-datasheets-8368332.pdf
MOSFET N-CH 1200V 1.5A H2PAK-2
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STH2N120K5-2AG Description
STH2N120K5-2AG is a high-power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed to handle high voltage and high current applications, making it suitable for a wide range of industrial and automotive applications.
Description:
The STH2N120K5-2AG is an N-channel MOSFET with a voltage rating of 1200V and a continuous current rating of 5A. It is available in a TO-220 package, which is a popular and widely used package for power MOSFETs.
Features:
- High Voltage Rating: The STH2N120K5-2AG has a high voltage rating of 1200V, making it suitable for applications that require high voltage switching.
- High Current Capability: With a continuous current rating of 5A, the STH2N120K5-2AG can handle high current loads, making it suitable for power conversion and motor control applications.
- Low On-Resistance: The MOSFET has a low on-resistance (RDS(on)), which helps to minimize power losses and improve efficiency in switching applications.
- High-Speed Switching: The STH2N120K5-2AG has fast switching characteristics, making it suitable for high-speed switching applications.
- Built-in Protection: The device features built-in protection mechanisms, such as over-voltage, over-current, and over-temperature protection, to ensure reliable operation.
Applications:
- Motor Control: The STH2N120K5-2AG can be used in motor control applications, such as in industrial machinery and automotive systems, where high voltage and current handling capabilities are required.
- Power Conversion: The MOSFET can be used in power conversion applications, such as in switching power supplies and battery chargers, where high efficiency and fast switching are important.
- Automotive Applications: The STH2N120K5-2AG is suitable for use in automotive applications, such as in electric vehicle (EV) powertrains and charging systems, due to its high voltage and current handling capabilities.
- Renewable Energy Systems: The MOSFET can be used in renewable energy systems, such as solar panel inverters and wind turbine converters, where high voltage and current handling are required.
- Industrial Control Systems: The STH2N120K5-2AG can be used in various industrial control systems, such as in HVAC (heating, ventilation, and air conditioning) systems, where high voltage and current switching is needed.
In summary, the STH2N120K5-2AG is a high-power MOSFET that offers high voltage and current handling capabilities, low on-resistance, and fast switching characteristics. It is suitable for a wide range of applications, including motor control, power conversion, automotive systems, renewable energy systems, and industrial control systems.
Tech Specifications
Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Grade
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
ECCN (EU)
RoHs compliant
STH2N120K5-2AG Documents
Download datasheets and manufacturer documentation for STH2N120K5-2AG
STH2N120K5-2AG Related Parts
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