STMicroelectronics_STW21N150K5

STMicroelectronics
STW21N150K5  
Single FETs, MOSFETs

STMicroelectronics
STW21N150K5
278-STW21N150K5
Ersa
STMicroelectronics-STW21N150K5-datasheets-9497484.pdf
MOSFET N-CH 1500V 14A TO247
In Stock : 134

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STW21N150K5 Description

STW21N150K5 is a high voltage N-channel MOSFET transistor manufactured by STMicroelectronics. It is designed for use in high voltage applications and offers several features that make it suitable for a wide range of applications.

Description:

The STW21N150K5 is an N-channel enhancement mode field effect transistor (FET) that features a high voltage rating of 1500V and a continuous drain current of 5.5A. It is housed in a TO-220 package, making it suitable for use in a variety of applications.

Features:

  1. High voltage rating: The STW21N150K5 has a high voltage rating of 1500V, making it suitable for use in high voltage applications.
  2. Continuous drain current: The transistor can handle a continuous drain current of 5.5A, making it suitable for use in applications that require high current handling.
  3. Low on-state resistance: The STW21N150K5 has a low on-state resistance, which helps to minimize power losses and improve efficiency in the application.
  4. High switching speed: The transistor has a high switching speed, which makes it suitable for use in applications that require fast switching times.
  5. High temperature operation: The STW21N150K5 can operate in temperatures ranging from -55°C to +175°C, making it suitable for use in a wide range of environments.

Applications:

The STW21N150K5 is suitable for use in a variety of high voltage applications, including:

  1. Motor control: The transistor can be used in motor control applications, such as in electric vehicles and industrial motor drives.
  2. Power supplies: The STW21N150K5 can be used in power supply applications, such as in switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).
  3. Inverters: The transistor can be used in inverter applications, such as in solar panel systems and battery backup systems.
  4. Battery protection: The STW21N150K5 can be used in battery protection circuits to prevent overcharging and over-discharging of batteries.
  5. Industrial control: The transistor can be used in industrial control applications, such as in conveyor systems and robotic arms.

In summary, the STW21N150K5 is a high voltage N-channel MOSFET transistor that offers several features, including a high voltage rating, continuous drain current, low on-state resistance, high switching speed, and high temperature operation. It is suitable for use in a wide range of high voltage applications, including motor control, power supplies, inverters, battery protection, and industrial control.

Tech Specifications

Unit Weight
Configuration
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product
PPAP
Fall Time
Automotive
RoHS
Maximum IDSS (uA)
Typical Turn-On Delay Time
REACH Status
Channel Type
Maximum Continuous Drain Current (A)
Maximum Drain Source Voltage (V)
Supplier Temperature Grade
Rds On (Max) @ Id, Vgs
Standard Package Name
Mounting
Rise Time
Current - Continuous Drain (Id) @ 25°C
Vgs th - Gate-Source Threshold Voltage
Package
Qg - Gate Charge
Power Dissipation (Max)
Process Technology
Package Height
Vgs (Max)
Maximum Operating Temperature
Width
RoHS Status
SVHC Exceeds Threshold
Transistor Polarity
Typical Gate Charge @ 10V (nC)
Maximum Diode Forward Voltage (V)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Tab
Length
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Typical Rise Time (ns)
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Technology
EU RoHS
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Vgs(th) (Max) @ Id
Pin Count
Lead Shape
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Typical Fall Time (ns)
Maximum Positive Gate Source Voltage (V)
Mfr
Height
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Package Length
Series
Operating Junction Temperature (°C)
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STW21N150K5 Documents

Download datasheets and manufacturer documentation for STW21N150K5

Ersa STW21N150K5      
Ersa Standard outer labelling 15/Nov/2023      
Ersa STW21N150K5      

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