The STP200N3LL is a high-performance N-Channel MOSFET from STMicroelectronics, designed for applications requiring robust power handling and efficient switching. With a drain-to-source voltage of 30V and a continuous drain current of 120A at 25°C, this device is well-suited for power electronics, motor control, and industrial applications. The STP200N3LL boasts a low on-resistance of 2.4mOhm at 60A and 10V, ensuring minimal power dissipation and high efficiency. Its maximum gate-source voltage is ±20V, providing flexibility in gate drive requirements.
STP200N3LL Features
Low On-Resistance: The STP200N3LL's low on-resistance of 2.4mOhm at 60A and 10V minimizes power losses and improves efficiency.
High Drain Current: Capable of handling continuous drain currents up to 120A at 25°C, this MOSFET is ideal for high-power applications.
Robust Voltage Rating: With a drain-to-source voltage of 30V, the STP200N3LL can be used in a wide range of power electronics applications.
Low Gate Charge: The maximum gate charge of 53nC at 4.5V reduces switching losses and improves overall efficiency.
Compliance with Regulations: The STP200N3LL is REACH unaffected and RoHS3 compliant, ensuring environmental and safety standards are met.
Moisture Sensitivity Level 1: This MOSFET has a moisture sensitivity level of 1, indicating no restrictions on storage or handling.
STP200N3LL Applications
The STP200N3LL is well-suited for a variety of applications where high power handling and efficient switching are required:
Power Electronics: Due to its high current and voltage ratings, the STP200N3LL is ideal for power supply designs and power conversion circuits.
Motor Control: The low on-resistance and high current capabilities make this MOSFET suitable for motor drive applications, including electric vehicles and industrial motor control systems.
Industrial Automation: The STP200N3LL's robust performance characteristics make it a good choice for industrial automation equipment, such as servo drives and robotic systems.
Conclusion of STP200N3LL
The STP200N3LL from STMicroelectronics is a powerful and efficient N-Channel MOSFET, offering a combination of high current handling, low on-resistance, and robust voltage ratings. Its compliance with environmental and safety regulations, along with its moisture sensitivity level, make it a reliable choice for a wide range of applications in power electronics, motor control, and industrial automation. With its unique features and advantages, the STP200N3LL stands out as a high-performance solution in the MOSFET market.
Tech Specifications
Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Material
Transistor Polarity
Package Length
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant
STP200N3LL Documents
Download datasheets and manufacturer documentation for STP200N3LL
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Shipping Rate
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