STMicroelectronics_STP6N95K5

STMicroelectronics
STP6N95K5  
Single FETs, MOSFETs

STMicroelectronics
STP6N95K5
278-STP6N95K5
Ersa
STMicroelectronics-STP6N95K5-datasheets-4288076.pdf
N-channel 950 V, 1 Ohm typ., 9 A
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    Tech Specifications Documents Description Related Parts Relevant Search Shopping Guide

    STP6N95K5 Description

    STP6N95K5 is a high voltage N-channel MOSFET transistor produced by STMicroelectronics. It is designed for use in a variety of applications, including motor control, power supplies, and power management systems.

    Description:

    The STP6N95K5 is an N-channel enhancement mode field-effect transistor (FET) with a voltage rating of 650V and a continuous drain current of 95A. It is available in a TO-220 package, which is a popular choice for high-power applications.

    Features:

    • High voltage rating of 650V
    • Continuous drain current of 95A
    • N-channel enhancement mode
    • Available in a TO-220 package
    • Low on-state resistance (RDS(on))
    • High switching speed
    • Low gate charge
    • Suitable for use in high-power applications

    Applications:

    The STP6N95K5 is suitable for a wide range of applications, including:

    1. Motor control: The high voltage and current ratings make it suitable for use in motor control applications, such as in industrial machinery and automotive systems.
    2. Power supplies: The STP6N95K5 can be used in power supply circuits, such as in switching power supplies and battery chargers.
    3. Power management systems: The transistor's high voltage and current ratings make it suitable for use in power management systems, such as in renewable energy systems and energy storage systems.
    4. Inverters: The STP6N95K5 can be used in inverter circuits, such as in solar panel systems and uninterruptible power supply (UPS) systems.

    Overall, the STP6N95K5 is a versatile and high-performance MOSFET transistor that is suitable for use in a variety of high-power applications. Its high voltage and current ratings, combined with its low on-state resistance and high switching speed, make it an excellent choice for use in motor control, power supplies, and power management systems.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Maximum IDSS (uA)
    Package / Case
    Technology
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    RoHS Status
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Package Length
    Typical Gate Charge @ 10V (nC)
    Series
    Tab
    Part Status
    Maximum Gate Threshold Voltage (V)
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Maximum Operating Temperature
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Rise Time
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    STP6N95K5 Documents

    Download datasheets and manufacturer documentation for STP6N95K5

    Ersa STx6N95K5      
    Ersa STP6N95K5 View All Specifications      
    Ersa STx6N95K5      

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