STMicroelectronics_STP60NF06

STMicroelectronics
STP60NF06  
Single FETs, MOSFETs

STMicroelectronics
STP60NF06
278-STP60NF06
MOSFET N-CH 60V 60A TO220AB
In Stock : 1736

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    STP60NF06 Description

    STP60NF06 Description

    The STP60NF06 is a high-performance MOSFET (Metal Oxide) from STMicroelectronics, designed for applications requiring robust power handling and efficient switching. With a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 60A at 25°C, this N-channel device delivers exceptional performance in power electronics. Its low on-resistance (Rds On) of 16mOhm at 30A and 10V gate-source voltage ensures minimal power dissipation, making it ideal for high-efficiency power conversion systems.

    STP60NF06 Features

    • High Voltage and Current Ratings: The STP60NF06 can handle a maximum drain-source voltage of 60V and a continuous drain current of 60A, making it suitable for high-power applications.
    • Low On-Resistance: With an Rds On of just 16mOhm at 30A and 10V, this MOSFET minimizes power losses and improves efficiency in power electronic systems.
    • Robust Gate Drive: The device features a maximum gate-source voltage (Vgs) of ±20V, providing flexibility in gate drive design and ensuring reliable operation.
    • Low Gate Charge: The STP60NF06 has a maximum gate charge (Qg) of 73nC at 10V, contributing to fast switching speeds and reduced switching losses.
    • Through-Hole Mounting: The TO220AB package allows for easy integration into existing through-hole designs, providing a reliable mechanical connection.
    • Environmental Compliance: The STP60NF06 is compliant with RoHS3 and REACH regulations, ensuring its use in environmentally conscious applications.

    STP60NF06 Applications

    The STP60NF06 is well-suited for a variety of high-power applications, including:

    • Power Supplies: Its high voltage and current ratings make it ideal for use in power supply designs, providing efficient power conversion and regulation.
    • Motor Control: The low on-resistance and fast switching capabilities of the STP60NF06 make it suitable for motor control applications, where precise current control and high efficiency are critical.
    • Industrial Automation: In industrial automation systems, the STP60NF06 can be used for driving high-power actuators and motors, ensuring reliable operation in demanding environments.
    • Renewable Energy Systems: The device's high efficiency and robust performance make it an excellent choice for solar inverters and other renewable energy applications.

    Conclusion of STP60NF06

    The STP60NF06 from STMicroelectronics is a powerful and efficient MOSFET, offering a unique combination of high voltage and current ratings, low on-resistance, and fast switching capabilities. Its compliance with environmental regulations and ease of integration into existing designs make it an ideal choice for a wide range of high-power applications. With its performance benefits and versatile features, the STP60NF06 stands out as a reliable and efficient solution in the power electronics industry.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Supplier Temperature Grade
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    RoHS Status
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Package Length
    Typical Gate Charge @ 10V (nC)
    Series
    Tab
    Part Status
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Fall Time
    RoHS
    Qg - Gate Charge
    Tradename
    Transistor Type
    Number of Channels
    Typical Turn-On Delay Time
    Height
    Maximum Operating Temperature
    Width
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Type
    Rise Time
    Length
    Forward Transconductance - Min
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    STP60NF06 Documents

    Download datasheets and manufacturer documentation for STP60NF06

    Ersa STP60NF06      
    Ersa STP60NF06 View All Specifications      
    Ersa STP60NF06      

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