STMicroelectronics_STD10NF30

STMicroelectronics
STD10NF30  
Single FETs, MOSFETs

STMicroelectronics
STD10NF30
278-STD10NF30
Ersa
STMicroelectronics-STD10NF30-datasheets-7819354.pdf
MOSFET N-CHANNEL 300V 10A DPAK
In Stock : 1942

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STD10NF30 Description

STD10NF30 Description

The STD10NF30 is a high-performance N-channel MOSFET from STMicroelectronics, designed for demanding automotive applications. It offers a unique combination of low on-resistance, high input capacitance, and low gate charge, making it ideal for high-efficiency power management in automotive systems. The device is built on STMicroelectronics' advanced MESH OVERLAY™ technology, ensuring superior performance and reliability.

STD10NF30 Features

  • Low On-Resistance: The STD10NF30 boasts an ultra-low on-resistance of 330mOhm at 5A and 10V, enabling high-efficiency power conversion and reducing power losses in automotive systems.
  • High Input Capacitance: With a maximum input capacitance of 780 pF at 25V, the STD10NF30 offers excellent high-frequency performance, making it suitable for high-speed switching applications.
  • Low Gate Charge: The device features a low gate charge of 23 nC at 10V, reducing switching losses and improving overall efficiency.
  • Robust Voltage Ratings: The STD10NF30 can handle drain-to-source voltages up to 300V, making it suitable for a wide range of automotive applications.
  • Automotive Grade: The device is designed to meet the stringent requirements of the automotive industry, with a maximum power dissipation of 103W at Tc and a moisture sensitivity level of 1 (unlimited).
  • Compliance: The STD10NF30 is compliant with the latest RoHS3 standards, ensuring environmental sustainability and regulatory compliance.

STD10NF30 Applications

The STD10NF30 is ideal for a variety of automotive applications, including:

  • Power Management: The low on-resistance and high input capacitance make it suitable for high-efficiency power conversion in automotive systems.
  • Motor Control: The device's robust voltage ratings and low gate charge make it ideal for motor control applications, such as electric power steering and electric vehicle motor drives.
  • LED Lighting: The STD10NF30 can be used in automotive LED lighting systems, providing efficient power management and high-speed switching capabilities.
  • Battery Management: The device's low on-resistance and high input capacitance make it suitable for battery management systems in electric and hybrid vehicles.

Conclusion of STD10NF30

The STD10NF30 is a high-performance N-channel MOSFET from STMicroelectronics, designed specifically for demanding automotive applications. Its unique combination of low on-resistance, high input capacitance, and low gate charge, along with its robust voltage ratings and automotive-grade compliance, make it an ideal choice for high-efficiency power management, motor control, LED lighting, and battery management systems in the automotive industry. With its advanced MESH OVERLAY™ technology, the STD10NF30 offers superior performance and reliability, ensuring optimal operation in the most demanding automotive environments.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Grade
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
ECCN (EU)
RoHs compliant

STD10NF30 Documents

Download datasheets and manufacturer documentation for STD10NF30

Ersa Assembly Site 07/Nov/2022      
Ersa STD10NF30      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STD10NF30      

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