STMicroelectronics_SCTWA70N120G2V-4

STMicroelectronics
SCTWA70N120G2V-4  
Single FETs, MOSFETs

STMicroelectronics
SCTWA70N120G2V-4
278-SCTWA70N120G2V-4
Ersa
STMicroelectronics-SCTWA70N120G2V-4-datasheets-7943303.pdf
DISCRETE
In Stock : 90

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ
ADD TO RFQ LIST
ersa FreeSample ersa flow
ISO9001
Quality Policy
ISO45001
ISO14001

SCTWA70N120G2V-4 Description

The SCTWA70N120G2V-4 is a high-power MOSFET transistor manufactured by STMicroelectronics. It is a part of the company's extensive range of power electronic components designed for various applications.

Description:

The SCTWA70N120G2V-4 is a N-channel, high-voltage MOSFET transistor. It is designed to operate at a voltage of up to 1200V and a continuous current of up to 70A. The transistor is available in a TO-220 package, which is a popular and widely used package for power electronic components.

Features:

  1. High-voltage operation: The SCTWA70N120G2V-4 can operate at voltages up to 1200V, making it suitable for high-voltage applications.
  2. High current capability: The transistor can handle continuous currents of up to 70A, making it suitable for high-power applications.
  3. N-channel design: The N-channel design allows for efficient switching and low on-resistance.
  4. TO-220 package: The transistor is available in a TO-220 package, which is a popular and widely used package for power electronic components.
  5. Robust protection features: The SCTWA70N120G2V-4 includes built-in protection features such as over-voltage, over-current, and over-temperature protection.

Applications:

The SCTWA70N120G2V-4 is suitable for a wide range of applications that require high-voltage and high-current operation. Some of the potential applications include:

  1. Power supplies: The high-voltage and high-current capabilities make the SCTWA70N120G2V-4 suitable for use in power supply circuits.
  2. Motor control: The transistor can be used in motor control applications, such as in electric vehicles or industrial motor drives.
  3. Renewable energy systems: The high-voltage and high-current capabilities make the SCTWA70N120G2V-4 suitable for use in renewable energy systems, such as solar panel systems or wind turbines.
  4. Battery management systems: The transistor can be used in battery management systems for electric vehicles or other battery-powered devices.
  5. Industrial automation: The SCTWA70N120G2V-4 can be used in various industrial automation applications, such as in motor drives or power control circuits.

Overall, the SCTWA70N120G2V-4 is a versatile and high-performance MOSFET transistor that can be used in a wide range of high-voltage and high-current applications. Its robust protection features and popular TO-220 package make it a reliable choice for power electronic designs.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
Product
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Material
Transistor Polarity
Package Length
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

SCTWA70N120G2V-4 Documents

Download datasheets and manufacturer documentation for SCTWA70N120G2V-4

Ersa Product Change Notification 2024-06-17 (PDF)      

Shopping Guide

Payment Methods
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service