The SCTWA70N120G2V-4 is a high-power MOSFET transistor manufactured by STMicroelectronics. It is a part of the company's extensive range of power electronic components designed for various applications.
Description:
The SCTWA70N120G2V-4 is a N-channel, high-voltage MOSFET transistor. It is designed to operate at a voltage of up to 1200V and a continuous current of up to 70A. The transistor is available in a TO-220 package, which is a popular and widely used package for power electronic components.
Features:
High-voltage operation: The SCTWA70N120G2V-4 can operate at voltages up to 1200V, making it suitable for high-voltage applications.
High current capability: The transistor can handle continuous currents of up to 70A, making it suitable for high-power applications.
N-channel design: The N-channel design allows for efficient switching and low on-resistance.
TO-220 package: The transistor is available in a TO-220 package, which is a popular and widely used package for power electronic components.
Robust protection features: The SCTWA70N120G2V-4 includes built-in protection features such as over-voltage, over-current, and over-temperature protection.
Applications:
The SCTWA70N120G2V-4 is suitable for a wide range of applications that require high-voltage and high-current operation. Some of the potential applications include:
Power supplies: The high-voltage and high-current capabilities make the SCTWA70N120G2V-4 suitable for use in power supply circuits.
Motor control: The transistor can be used in motor control applications, such as in electric vehicles or industrial motor drives.
Renewable energy systems: The high-voltage and high-current capabilities make the SCTWA70N120G2V-4 suitable for use in renewable energy systems, such as solar panel systems or wind turbines.
Battery management systems: The transistor can be used in battery management systems for electric vehicles or other battery-powered devices.
Industrial automation: The SCTWA70N120G2V-4 can be used in various industrial automation applications, such as in motor drives or power control circuits.
Overall, the SCTWA70N120G2V-4 is a versatile and high-performance MOSFET transistor that can be used in a wide range of high-voltage and high-current applications. Its robust protection features and popular TO-220 package make it a reliable choice for power electronic designs.
Tech Specifications
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
Product
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Material
Transistor Polarity
Package Length
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant
SCTWA70N120G2V-4 Documents
Download datasheets and manufacturer documentation for SCTWA70N120G2V-4
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Shipping Rate
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