STMicroelectronics_STD4NK60Z-1
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STMicroelectronics
STD4NK60Z-1

278-STD4NK60Z-1
600V 4A N-CH MOSFET, 2 Ohm, IPAK, Through Hole
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Tech Specifications

Package/Case
TO-251-3
Continuous Drain Current (ID)
4A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
2R
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
2R
Fall Time
16.5ns
Gate to Source Voltage (Vgs)
30V
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STD4NK60Z-1 Description

STD4NK60Z-1 Description

The STD4NK60Z-1 is a high-performance MOSFET N-CH 600V 4A IPAK from STMicroelectronics, designed for demanding power electronics applications. This device offers superior technical specifications and performance benefits, making it an ideal choice for various applications in the electronics industry.

STD4NK60Z-1 Features

  • 600V Drain to Source Voltage (Vdss): The STD4NK60Z-1 can handle high voltages, making it suitable for applications requiring robust voltage handling capabilities.
  • 4A Continuous Drain Current (Id) @ 25°C: This device can handle a continuous drain current of 4A, ensuring reliable performance in high-current applications.
  • 2 Ohm Rds On (Max) @ 2A, 10V: The low on-resistance of the STD4NK60Z-1 contributes to high efficiency and reduced power losses in power electronic circuits.
  • 4.5V Vgs(th) (Max) @ 50µA: The STD4NK60Z-1 has a low threshold voltage, enabling efficient operation with minimal gate drive requirements.
  • 70W Power Dissipation (Max): This device can dissipate up to 70W of power, making it suitable for high-power applications.
  • 510 pF Input Capacitance (Ciss) (Max) @ 25 V: The STD4NK60Z-1 offers low input capacitance, which helps in reducing switching losses and improving overall efficiency.
  • 26 nC Gate Charge (Qg) (Max) @ 10 V: The low gate charge of this device contributes to reduced switching losses and improved efficiency in high-speed applications.
  • ROHS3 Compliant: The STD4NK60Z-1 meets the stringent environmental requirements of the RoHS directive, making it an eco-friendly choice for electronic designs.
  • REACH Unaffected: This device is not affected by the REACH regulation, ensuring compliance with European chemical safety standards.

STD4NK60Z-1 Applications

The STD4NK60Z-1 is an ideal choice for a wide range of power electronics applications, including:

  • Power Supplies: Due to its high voltage and current ratings, the STD4NK60Z-1 is well-suited for power supply designs, where high efficiency and reliability are critical.
  • Motor Controls: The low on-resistance and high current handling capabilities make this device ideal for motor control applications, where precise control and high efficiency are essential.
  • Industrial Automation: The STD4NK60Z-1 can be used in various industrial automation applications, such as motor drives and power distribution systems, where high voltage and current ratings are required.
  • Renewable Energy Systems: This device can be employed in renewable energy systems, such as solar inverters and wind power converters, where high efficiency and reliability are crucial.

Conclusion of STD4NK60Z-1

The STD4NK60Z-1 is a high-performance MOSFET N-CH 600V 4A IPAK from STMicroelectronics, offering superior technical specifications and performance benefits for demanding power electronics applications. Its unique features, such as low on-resistance, low input capacitance, and high power dissipation, make it an ideal choice for applications requiring high efficiency and reliability. With its compliance to environmental regulations and suitability for a wide range of applications, the STD4NK60Z-1 is a valuable addition to any power electronics design.

FAQ

Is STD4NK60Z-1 currently in stock?
Yes. STD4NK60Z-1 currently shows 39 unit(s) in stock.
What operating temperature range does STD4NK60Z-1 support?
Are there related or alternative parts for STD4NK60Z-1?
What is the standard lead time for STD4NK60Z-1?
What package or case is STD4NK60Z-1 available in?
Availability (In Stock : 39 )
Quantity Unit Price Ext. Price
1+ $0.81085 $0.81
10+ $0.79028 $7.90
30+ $0.77657 $23.30
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