STMicroelectronics_STD4NK60Z-1

STMicroelectronics
STD4NK60Z-1  
Single FETs, MOSFETs

STMicroelectronics
STD4NK60Z-1
278-STD4NK60Z-1
MOSFET N-CH 600V 4A IPAK
In Stock : 2905

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STD4NK60Z-1 Description

STD4NK60Z-1 Description

The STD4NK60Z-1 is a high-performance MOSFET N-CH 600V 4A IPAK from STMicroelectronics, designed for demanding power electronics applications. This device offers superior technical specifications and performance benefits, making it an ideal choice for various applications in the electronics industry.

STD4NK60Z-1 Features

  • 600V Drain to Source Voltage (Vdss): The STD4NK60Z-1 can handle high voltages, making it suitable for applications requiring robust voltage handling capabilities.
  • 4A Continuous Drain Current (Id) @ 25°C: This device can handle a continuous drain current of 4A, ensuring reliable performance in high-current applications.
  • 2 Ohm Rds On (Max) @ 2A, 10V: The low on-resistance of the STD4NK60Z-1 contributes to high efficiency and reduced power losses in power electronic circuits.
  • 4.5V Vgs(th) (Max) @ 50µA: The STD4NK60Z-1 has a low threshold voltage, enabling efficient operation with minimal gate drive requirements.
  • 70W Power Dissipation (Max): This device can dissipate up to 70W of power, making it suitable for high-power applications.
  • 510 pF Input Capacitance (Ciss) (Max) @ 25 V: The STD4NK60Z-1 offers low input capacitance, which helps in reducing switching losses and improving overall efficiency.
  • 26 nC Gate Charge (Qg) (Max) @ 10 V: The low gate charge of this device contributes to reduced switching losses and improved efficiency in high-speed applications.
  • ROHS3 Compliant: The STD4NK60Z-1 meets the stringent environmental requirements of the RoHS directive, making it an eco-friendly choice for electronic designs.
  • REACH Unaffected: This device is not affected by the REACH regulation, ensuring compliance with European chemical safety standards.

STD4NK60Z-1 Applications

The STD4NK60Z-1 is an ideal choice for a wide range of power electronics applications, including:

  • Power Supplies: Due to its high voltage and current ratings, the STD4NK60Z-1 is well-suited for power supply designs, where high efficiency and reliability are critical.
  • Motor Controls: The low on-resistance and high current handling capabilities make this device ideal for motor control applications, where precise control and high efficiency are essential.
  • Industrial Automation: The STD4NK60Z-1 can be used in various industrial automation applications, such as motor drives and power distribution systems, where high voltage and current ratings are required.
  • Renewable Energy Systems: This device can be employed in renewable energy systems, such as solar inverters and wind power converters, where high efficiency and reliability are crucial.

Conclusion of STD4NK60Z-1

The STD4NK60Z-1 is a high-performance MOSFET N-CH 600V 4A IPAK from STMicroelectronics, offering superior technical specifications and performance benefits for demanding power electronics applications. Its unique features, such as low on-resistance, low input capacitance, and high power dissipation, make it an ideal choice for applications requiring high efficiency and reliability. With its compliance to environmental regulations and suitability for a wide range of applications, the STD4NK60Z-1 is a valuable addition to any power electronics design.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
Height
Maximum Operating Temperature
Width
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Length
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Operating Temperature (°C) (max)
Operating Temperature (°C) (min)
Grade
ECCN (EU)
RoHs compliant

STD4NK60Z-1 Documents

Download datasheets and manufacturer documentation for STD4NK60Z-1

Ersa IPAK and Short IPAK in ECOPACK 2, graded Moulding Compound Assembly capacity expansion - Nantong Fujitsu Microelectronics (China) Subcontractor (PDF)       Product Change Notification (PDF)       PRODUCT CHANGE NOTIFICATION (PDF)      

Shopping Guide

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