STMicroelectronics_STL110N4F7AG

STMicroelectronics
STL110N4F7AG  
Single FETs, MOSFETs

STMicroelectronics
STL110N4F7AG
278-STL110N4F7AG
Ersa
STMicroelectronics-STL110N4F7AG-datasheets-1443991.pdf
MOSFET N-CH 40V 108A POWERFLAT
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STL110N4F7AG Description

STL110N4F7AG Description

The STL110N4F7AG is a high-performance N-Channel MOSFET from STMicroelectronics, designed for automotive applications. It offers a range of technical specifications and performance benefits that make it ideal for various power management and control applications. With its advanced technology and unique features, the STL110N4F7AG stands out among similar models in the market.

STL110N4F7AG Features

  • Technology: MOSFET (Metal Oxide) with advanced STripFET™ F7 series
  • Input Capacitance (Ciss): 1150 pF @ 25 V
  • Gate Charge (Qg): 15 nC @ 10 V
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id): 108A @ 25°C
  • Rds On (Max): 4mOhm @ 54A, 10V
  • Vgs (Max): ±20V
  • Vgs(th) (Max): 4V @ 250µA
  • Power Dissipation (Max): 94W (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Mounting Type: Surface Mount
  • Package: PowerFlat™ (5x6)
  • Supplier Device Package: Tape & Reel (TR)
  • Grade: Automotive
  • REACH Status: REACH Unaffected
  • RoHS Status: ROHS3 Compliant
  • ECCN: EAR99
  • HTSUS: 8541.29.0095
  • Base Product Number: STL110

STL110N4F7AG Applications

The STL110N4F7AG is ideal for a wide range of automotive applications where high power management and control are required. Some specific use cases include:

  1. Power Management Systems: The STL110N4F7AG's high current and voltage ratings make it suitable for managing power in automotive systems, such as battery management and power distribution.
  2. Motor Control: Its low Rds On and high current capabilities make it an excellent choice for controlling electric motors in electric vehicles (EVs) and hybrid electric vehicles (HEVs).
  3. LED Lighting: The STL110N4F7AG can be used in automotive LED lighting systems, providing efficient power control and management.
  4. Power Converters: Its high power dissipation and low Rds On make it ideal for use in power converters, such as DC-DC converters and inverters.

Conclusion of STL110N4F7AG

The STL110N4F7AG from STMicroelectronics is a high-performance N-Channel MOSFET designed for automotive applications. Its advanced technology, unique features, and superior performance make it an excellent choice for power management, motor control, LED lighting, and power conversion applications. With its automotive-grade rating and compliance with REACH and RoHS standards, the STL110N4F7AG is a reliable and environmentally friendly solution for your automotive electronics needs.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Grade
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Pin Count
Mounting
Qualification
Rise Time
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
ECCN (EU)
RoHs compliant

STL110N4F7AG Documents

Download datasheets and manufacturer documentation for STL110N4F7AG

Ersa STL110N4F7AG      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa STL110N4F7AG      

Shopping Guide

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Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
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