STMicroelectronics_STD16NF06LT4

STMicroelectronics
STD16NF06LT4  
Single FETs, MOSFETs

STMicroelectronics
STD16NF06LT4
278-STD16NF06LT4
Ersa
STMicroelectronics-STD16NF06LT4-datasheets-4730933.pdf
MOSFET N-CH 60V 24A DPAK
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STD16NF06LT4 Description

The STD16NF06LT4 is a high voltage N-channel MOSFET transistor manufactured by STMicroelectronics. It is designed for use in a variety of applications, including motor control, power supplies, and other high voltage switching applications.

Description:

The STD16NF06LT4 is an N-channel enhancement mode field effect transistor (MOSFET) with a drain-source voltage (VDS) of up to 60V and a continuous drain current (ID) of up to 4.2A. It is available in a TO-220 package.

Features:

  • High voltage operation: The STD16NF06LT4 is designed to operate at high voltages, making it suitable for use in applications that require high voltage switching.
  • Low on-state resistance (RDS(on)): The on-state resistance of the STD16NF06LT4 is low, which helps to minimize power dissipation and improve efficiency.
  • High switching speed: The STD16NF06LT4 has a fast switching speed, which makes it well-suited for use in applications that require rapid switching.
  • Logic level compatible: The STD16NF06LT4 is compatible with logic level control, which makes it easy to interface with microcontrollers and other digital circuits.

Applications:

The STD16NF06LT4 is suitable for a wide range of applications, including:

  1. Motor control: The high voltage and low on-state resistance of the STD16NF06LT4 make it well-suited for use in motor control applications, such as brushless DC motor drivers and stepper motor drivers.
  2. Power supplies: The STD16NF06LT4 can be used in power supply applications, such as switch mode power supplies (SMPS) and power converters.
  3. Inverters: The high voltage and fast switching speed of the STD16NF06LT4 make it suitable for use in inverter applications, such as solar panel inverters and uninterruptible power supply (UPS) systems.
  4. Industrial control: The STD16NF06LT4 can be used in industrial control applications, such as robotic arms and conveyor systems.

Overall, the STD16NF06LT4 is a versatile and high-performance MOSFET transistor that is well-suited for a wide range of high voltage switching applications. Its low on-state resistance, high switching speed, and logic level compatibility make it an excellent choice for designers looking for a reliable and efficient solution.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Type
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STD16NF06LT4 Documents

Download datasheets and manufacturer documentation for STD16NF06LT4

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