STMicroelectronics_STB28N60DM2

STMicroelectronics
STB28N60DM2  
Single FETs, MOSFETs

STMicroelectronics
STB28N60DM2
278-STB28N60DM2
Ersa
STMicroelectronics-STB28N60DM2-datasheets-11269349.pdf
MOSFET N-CH 600V 21A D2PAK
In Stock : 2132

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STB28N60DM2 Description

STB28N60DM2 is a high voltage N-channel MOSFET transistor manufactured by STMicroelectronics. It is designed for use in a variety of applications, including high voltage switching and power management.

Description:

The STB28N60DM2 is an N-channel enhancement mode field effect transistor (MOSFET). It is a three-pin device, with a source (S), drain (D), and gate (G) terminal. The device is available in a TO-220 package.

Features:

  • High voltage operation: The STB28N60DM2 is rated for a maximum drain-source voltage (VDS) of 600V, making it suitable for use in high voltage applications.
  • High current capability: The device can handle a continuous drain current (ID) of up to 28A, making it suitable for use in high current applications.
  • Low on-state resistance (RDS(on)): The STB28N60DM2 has a low on-state resistance (RDS(on)) of 0.65 ohms (maximum) at a gate-source voltage (VGS) of 10V, which helps to minimize power dissipation in the device.
  • Fast switching speed: The device has a fast switching speed, with a typical gate charge (Qg) of 46nC and a typical turn-on delay time (td(on)) of 4.6ns.

Applications:

The STB28N60DM2 is suitable for use in a variety of applications, including:

  • High voltage switching: The device's high voltage rating makes it suitable for use in high voltage switching applications, such as in power supplies and motor control circuits.
  • Power management: The STB28N60DM2 can be used in power management applications, such as in battery chargers and power adapters.
  • Motor control: The device's high current capability and fast switching speed make it suitable for use in motor control applications, such as in industrial machinery and automotive systems.

In summary, the STB28N60DM2 is a high voltage, high current N-channel MOSFET transistor that offers fast switching speed and low on-state resistance. It is suitable for use in a variety of high voltage and high current applications, including high voltage switching, power management, and motor control.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Package Length
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Tab
Forward Transconductance - Min
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STB28N60DM2 Documents

Download datasheets and manufacturer documentation for STB28N60DM2

Ersa Wafer 15/Feb/2019      
Ersa ST(B,P,W)28N60DM2      
Ersa Mult Dev Inner Box Chg 9/Dec/2021      
Ersa ST(B,P,W)28N60DM2      

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