STMicroelectronics_STL13N60M2

STMicroelectronics
STL13N60M2  
Single FETs, MOSFETs

STMicroelectronics
STL13N60M2
278-STL13N60M2
Ersa
STMicroelectronics-STL13N60M2-datasheets-1993371.pdf
MOSFET N-CH 600V 7A POWERFLAT HV
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STL13N60M2 Description

STL13N60M2 Description

The STL13N60M2 is a high-performance MOSFET N-CH 600V 7A POWERFLAT HV from STMicroelectronics. This single FET is designed for demanding applications requiring high power dissipation, low on-resistance, and fast switching capabilities. With a maximum drain-source voltage of 600V and continuous drain current of 7A at 25°C, the STL13N60M2 delivers exceptional performance in various power electronic systems.

STL13N60M2 Features

  • Technology: MOSFET (Metal Oxide) - Provides high efficiency and low power loss in switching applications.
  • Drain to Source Voltage (Vdss): 600V - Suitable for high-voltage applications.
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc) - Capable of handling high current loads.
  • Rds On (Max) @ Id, Vgs: 420mOhm @ 4.5A, 10V - Offers low on-resistance for minimal power dissipation.
  • Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V - Fast switching capabilities for improved efficiency.
  • Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V - Minimizes parasitic effects in high-speed applications.
  • Operating Temperature: 150°C (TJ) - Designed for high-temperature environments.
  • Mounting Type: Surface Mount -。
  • REACH Status: REACH Unaffected - Compliant with European Union regulations.
  • RoHS Status: ROHS3 Compliant - Environmentally friendly and suitable for green products.

STL13N60M2 Applications

The STL13N60M2 is ideal for various high-power applications, including:

  1. Power Supplies: Utilized in switch-mode power supplies (SMPS) for efficient energy conversion.
  2. Industrial Control: Employed in motor drives and industrial automation systems for precise control.
  3. Renewable Energy: Integrated into solar inverters and wind power systems for reliable energy harvesting.
  4. Automotive: Used in electric vehicle (EV) charging systems and battery management for enhanced performance.

Conclusion of STL13N60M2

The STL13N60M2 from STMicroelectronics is a powerful MOSFET designed for high-voltage and high-current applications. Its unique combination of low on-resistance, fast switching, and high power dissipation capabilities make it an excellent choice for demanding power electronic systems. With its compliance with REACH and RoHS regulations, the STL13N60M2 is not only a high-performance solution but also an environmentally conscious one. Ideal for applications such as power supplies, industrial control, renewable energy, and automotive, the STL13N60M2 stands out as a reliable and efficient component in the world of electronics.

Tech Specifications

Unit Weight
Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Id - Continuous Drain Current
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Fall Time
Automotive
RoHS
Drain to Source Voltage (Vdss)
Supplier Package
Tradename
Maximum IDSS (uA)
Transistor Type
Package / Case
Number of Channels
Typical Turn-On Delay Time
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Rds On - Drain-Source Resistance
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Rise Time
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs th - Gate-Source Threshold Voltage
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
USHTS
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Qg - Gate Charge
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
Maximum Operating Temperature
RoHS Status
Mounting Style
FET Feature
Maximum Gate Source Voltage (V)
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Typical Gate Charge @ 10V (nC)
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Series
Part Status
Maximum Gate Threshold Voltage (V)
Pd - Power Dissipation
Base Product Number
Grade
ECCN (EU)
RoHs compliant

STL13N60M2 Documents

Download datasheets and manufacturer documentation for STL13N60M2

Ersa Product Discontinuance Notification (PDF)      
Ersa Product Change Notification (PDF)      

Shopping Guide

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