The STW20NM50FD from STMicroelectronics is a high-performance N-channel 500V, 20A power MOSFET designed for demanding switching applications. Packaged in a robust TO-247-3 format, it features FDmesh™ technology, delivering ultra-low on-resistance (250mΩ @ 10A, 10V) and superior switching efficiency. With a gate charge (Qg) of 53nC @ 10V and input capacitance (Ciss) of 1380pF @ 25V, it ensures fast switching speeds while minimizing power losses. The device operates reliably up to 150°C (TJ) and supports a ±30V gate-source voltage (Vgs), making it suitable for high-voltage environments.
STW20NM50FD Features
High Voltage & Current Rating: 500V Vdss and 20A continuous drain current (Id) for robust power handling.
Switched-Mode Power Supplies (SMPS): Ideal for AC-DC converters and high-voltage DC-DC stages.
Motor Drives & Inverters: Efficiently controls brushless DC (BLDC) motors and industrial inverters.
Renewable Energy Systems: Suitable for solar inverters and wind power converters due to high voltage tolerance.
Industrial & Automotive Systems: Used in power factor correction (PFC), UPS systems, and electric vehicle (EV) charging.
Conclusion of STW20NM50FD
The STW20NM50FD stands out as a high-efficiency, high-reliability MOSFET for 500V power switching applications. Its low Rds(on), fast switching, and thermal robustness make it a preferred choice for SMPS, motor drives, and renewable energy systems. With STMicroelectronics' FDmesh™ technology, it outperforms conventional MOSFETs in power density and energy efficiency, ensuring optimal performance in demanding industrial and automotive environments.
Tech Specifications
Configuration
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
SVHC
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
SVHC Exceeds Threshold
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Length
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
STW20NM50FD Documents
Download datasheets and manufacturer documentation for STW20NM50FD
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Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
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