The STGW35HF60WD from STMicroelectronics is a high-performance 600V, 60A Insulated Gate Bipolar Transistor (IGBT) housed in a TO-247 package. Designed for robust power switching applications, it features a low collector-emitter saturation voltage (Vce(on)) of 2.5V @ 15V, 20A, ensuring efficient conduction losses. With a maximum power dissipation of 200W, this IGBT is optimized for high-current, high-voltage environments. Although marked as obsolete, its specifications remain competitive, offering a reverse recovery time (trr) of 50ns and switching energies of 290µJ (on) and 185µJ (off), making it suitable for fast-switching scenarios.
The STGW35HF60WD is a reliable, high-efficiency IGBT for 600V/60A applications, offering low conduction losses, fast switching, and thermal resilience. While obsolete, its TO-247 packaging, compliance, and performance metrics make it a viable choice for legacy designs in industrial, energy, and power electronics. Engineers seeking a proven solution for high-power switching will find this IGBT well-suited for demanding environments.
Download datasheets and manufacturer documentation for STGW35HF60WD