STMicroelectronics

STGYA120M65DF2  

Single IGBTs

STGYA120M65DF2 Description

The STGYA120M65DF2 from STMicroelectronics is a high-performance 650V, 160A NPT (Non-Punch Through) Trench Field Stop IGBT, designed for demanding power electronics applications. Part of the M Series, it features a low Vce(on) of 1.95V @ 15V, 120A, ensuring high efficiency with minimal conduction losses. The device is housed in the MAX247™ package, offering robust thermal and electrical performance. With a switching energy of 1.8mJ (on) and 4.41mJ (off), it balances fast switching and low power dissipation, making it ideal for high-frequency applications. The reverse recovery time (trr) of 202 ns further enhances its suitability for hard-switching topologies.

STGYA120M65DF2 Features

• High Voltage & Current Rating: 650V breakdown voltage and 160A continuous current (360A pulsed).
• Low Conduction Losses: Optimized 1.95V Vce(on) at 120A reduces heat generation.
• Fast Switching: Td(on/off) of 66ns/185ns ensures efficient high-frequency operation.
• Robust Package: MAX247™ through-hole design for superior thermal management.
• Low Gate Charge (420 nC): Minimizes drive requirements and improves switching efficiency.
• Compliance: ROHS3, REACH Unaffected, ECCN EAR99, and MSL1 (Unlimited) for reliability.

STGYA120M65DF2 Applications

This IGBT excels in:

• Industrial Motor Drives: High current handling and low losses improve inverter efficiency.
• Uninterruptible Power Supplies (UPS): Fast switching reduces energy waste in conversion stages.
• Renewable Energy Systems: Solar/wind inverters benefit from its high voltage tolerance.
• Welding Equipment: Robust performance under pulsed loads (360A Icm).
• Induction Heating: Low switching energy ensures precise control.

Conclusion of STGYA120M65DF2

The STGYA120M65DF2 stands out for its high power density, efficiency, and reliability, making it a top choice for industrial and renewable energy applications. Its Trench Field Stop technology and optimized switching characteristics provide a competitive edge over conventional IGBTs, ensuring superior performance in high-stress environments. With STMicroelectronics' quality assurance, this device is a dependable solution for next-generation power systems.

STGYA120M65DF2 Documents

Download datasheets and manufacturer documentation for STGYA120M65DF2

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STGYA120M65DF2 Datasheet      

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STGYA120M65DF2 Datasheet