STMicroelectronics

STGW25M120DF3

STGW25M120DF3 Description

The STGW25M120DF3 is a high-performance IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics, designed for demanding applications that require high voltage and current handling capabilities. With a maximum collector-emitter breakdown voltage of 1200V and a continuous collector current of 50A, this IGBT is suitable for a wide range of industrial and power electronics applications.

STGW25M120DF3 Features

• Technical Specifications:

  • Reverse Recovery Time (trr): 265 ns
  • Td (on/off) @ 25°C: 28ns/150ns
  • Switching Energy: 850µJ (on), 1.3mJ (off)
  • Gate Charge: 85 nC
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
  • Current - Collector Pulsed (Icm): 100 A
  • Power - Max: 375 W

• Performance Benefits:

  • Trench Field Stop IGBT technology for improved efficiency and reduced conduction losses
  • Low switching energy for reduced power consumption and improved thermal management
  • Fast switching times for high-frequency applications

• Environmental Compliance:

  • REACH Unaffected
  • ROHS3 Compliant
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)

STGW25M120DF3 Applications

The STGW25M120DF3 is ideal for applications that require high voltage, high current, and fast switching capabilities. Some specific use cases include:

1. Industrial Motor Drives: Due to its high voltage and current ratings, the STGW25M120DF3 is well-suited for motor control applications in industrial settings, such as conveyor systems and robotic arms.

2. Power Supplies: The STGW25M120DF3 can be used in high-voltage power supply designs, such as uninterruptible power supplies (UPS) and industrial power converters.

3. Renewable Energy Systems: With its ability to handle high voltage and current, the STGW25M120DF3 is an excellent choice for solar inverters and wind turbine power electronics.

4. Electric Vehicles: The STGW25M120DF3 can be used in the power electronics of electric vehicles, such as battery chargers and motor controllers.

Conclusion of STGW25M120DF3

The STGW25M120DF3 from STMicroelectronics is a high-performance IGBT that offers a combination of high voltage, high current, and fast switching capabilities. Its unique features, such as Trench Field Stop technology and low switching energy, make it an ideal choice for a wide range of industrial and power electronics applications. With its compliance to environmental regulations and robust performance, the STGW25M120DF3 is a reliable and efficient solution for demanding applications.