STMicroelectronics_STGW30M65DF2

STMicroelectronics
STGW30M65DF2  
Single IGBTs

STMicroelectronics
STGW30M65DF2
279-STGW30M65DF2
Ersa
STMicroelectronics-STGW30M65DF2-datasheets-4603219.pdf
TRENCH GATE FIELD-STOP IGBT M SE
In Stock : 1916

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STGW30M65DF2 Description

STGW30M65DF2 Description

The STGW30M65DF2 from STMicroelectronics is a high-performance 650V, 60A trench gate field-stop IGBT designed for robust power switching applications. This ROHS3-compliant and REACH-unaffected device features a low collector-emitter saturation voltage (2V @ 15V, 30A) and optimized switching characteristics, making it ideal for high-efficiency power conversion systems. Packaged in a through-hole format, it offers a maximum power dissipation of 258W and supports pulsed currents up to 120A, ensuring reliability in demanding conditions.

STGW30M65DF2 Features

  • Trench Field-Stop Technology: Enhances switching efficiency and reduces conduction losses.
  • Fast Switching Performance: Low turn-on/off delays (31.6ns/115ns) and reverse recovery time (140ns) minimize energy loss.
  • Low Gate Charge (80nC): Reduces drive requirements and improves thermal management.
  • High Ruggedness: Withstands 400V, 30A test conditions (10Ω, 15V) and exhibits low switching energy (300µJ on, 960µJ off).
  • Wide Operating Range: Suitable for industrial temperatures with MSL1 (unlimited) moisture sensitivity.

STGW30M65DF2 Applications

  • Motor Drives: Optimized for inverter stages in industrial and automotive motor control systems.
  • Switched-Mode Power Supplies (SMPS): High efficiency in PFC and DC-DC converters.
  • Renewable Energy Systems: Solar inverters and UPS due to low-loss switching.
  • Welding Equipment: Robust performance under high-current pulsed loads.

Conclusion of STGW30M65DF2

The STGW30M65DF2 stands out for its balanced trade-off between switching speed and conduction losses, backed by STMicroelectronics' trench field-stop technology. Its high current capability, low Vce(on), and reliability make it a superior choice for high-power applications requiring efficiency and durability. Engineers can leverage its standard input type and through-hole packaging for seamless integration into industrial and energy systems.

Tech Specifications

Unit Weight
Configuration
PPAP
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
RoHS
Supplier Package
Package / Case
Technology
Continuous Collector Current Ic Max
Typical Collector Emitter Saturation Voltage (V)
REACH Status
Channel Type
Maximum Gate Emitter Voltage (V)
EU RoHS
IGBT Type
Moisture Sensitivity Level (MSL)
Operating Temperature
Test Condition
Current - Collector (Ic) (Max)
ECCN
Supplier Temperature Grade
Mounting Type
Standard Package Name
Current - Collector Pulsed (Icm)
Pin Count
Mounting
Maximum Gate Emitter Leakage Current (uA)
Gate Charge
Lead Shape
Collector- Emitter Voltage VCEO Max
SVHC
HTSUS
Package
USHTS
Maximum Gate Emitter Voltage
Reverse Recovery Time (trr)
PCB changed
Maximum Collector-Emitter Voltage (V)
ECCN (US)
Maximum Power Dissipation (mW)
Td (on/off) @ 25°C
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Collector-Emitter Saturation Voltage
Mfr
Continuous Collector Current at 25 C
Maximum Operating Temperature
RoHS Status
Mounting Style
Input Type
Switching Energy
Maximum Continuous Collector Current (A)
SVHC Exceeds Threshold
Gate-Emitter Leakage Current
Package Length
Minimum Operating Temperature
Series
Vce(on) (Max) @ Vge, Ic
Tab
Power - Max
Part Status
Package Width
Pd - Power Dissipation
Base Product Number
Operating Temperature (°C) (max)
Operating Temperature (°C) (min)
Grade
ECCN (EU)
RoHs compliant

STGW30M65DF2 Documents

Download datasheets and manufacturer documentation for STGW30M65DF2

Ersa Product Change Notification (PDF)       PRODUCT CHANGE NOTIFICATION (PDF)      

Shopping Guide

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