The STGW30M65DF2 from STMicroelectronics is a high-performance 650V, 60A trench gate field-stop IGBT designed for robust power switching applications. This ROHS3-compliant and REACH-unaffected device features a low collector-emitter saturation voltage (2V @ 15V, 30A) and optimized switching characteristics, making it ideal for high-efficiency power conversion systems. Packaged in a through-hole format, it offers a maximum power dissipation of 258W and supports pulsed currents up to 120A, ensuring reliability in demanding conditions.
The STGW30M65DF2 stands out for its balanced trade-off between switching speed and conduction losses, backed by STMicroelectronics' trench field-stop technology. Its high current capability, low Vce(on), and reliability make it a superior choice for high-power applications requiring efficiency and durability. Engineers can leverage its standard input type and through-hole packaging for seamless integration into industrial and energy systems.
Download datasheets and manufacturer documentation for STGW30M65DF2