The STGB40H65FB from STMicroelectronics is a high-performance 650V, 40A trench field-stop IGBT in a D2PAK (TO-263) surface-mount package. Designed for efficiency and robustness, it features a low Vce(on) of 2V @ 15V, 40A, ensuring minimal conduction losses. With a collector current (Ic) rating of 80A and pulsed current (Icm) up to 160A, it delivers high power handling capability, making it suitable for demanding switching applications. The device boasts fast switching characteristics (td(on/off) = 40ns/142ns) and low switching energy (498µJ on, 363µJ off), optimizing performance in high-frequency circuits. Its RoHS3 compliance and REACH unaffected status ensure environmental and regulatory adherence.
This IGBT is ideal for:
The STGB40H65FB stands out for its balanced trade-off between conduction and switching losses, making it a versatile choice for high-power applications. Its robust construction, compliance with environmental standards, and ease of integration (via surface-mount packaging) position it as a superior alternative to conventional IGBTs. Engineers can rely on its STMicroelectronics' HB series pedigree for reliability in mission-critical systems.
Download datasheets and manufacturer documentation for STGB40H65FB