The STGD7NC60HT4 is a high-performance, single insulated gate bipolar transistor (IGBT) manufactured by STMicroelectronics. This device is part of the PowerMESH™ series and is designed for applications requiring high power and efficiency. With a maximum collector-emitter breakdown voltage of 600V and a continuous collector current of 25A, the STGD7NC60HT4 is capable of handling demanding power conversion tasks.
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The STGD7NC60HT4 is ideal for a range of high-power applications, including:
The STGD7NC60HT4 from STMicroelectronics is a powerful, efficient, and reliable IGBT designed for high-power applications. Its combination of high voltage and current ratings, low switching energy, and compliance with environmental standards make it an excellent choice for a variety of applications, from industrial motor control to electric vehicles. With its unique features and advantages, the STGD7NC60HT4 stands out as a leading solution in the PowerMESH™ series.
Download datasheets and manufacturer documentation for STGD7NC60HT4