The STGWF30NC60S from STMicroelectronics is a high-performance 600V, 35A IGBT (Insulated Gate Bipolar Transistor) housed in a TO-3P package, designed for robust power switching applications. Part of the PowerMESH™ series, this device combines low conduction losses with high-speed switching capabilities, making it ideal for demanding industrial and automotive environments. With a maximum power dissipation of 79W, it ensures efficient thermal management under high-load conditions. The IGBT features a collector-emitter breakdown voltage of 600V and a low Vce(on) of 1.9V @ 15V, 20A, minimizing energy losses. Its RoHS3 compliance and REACH unaffected status further enhance its suitability for modern, eco-conscious designs.
This IGBT excels in:
The STGWF30NC60S stands out as a versatile, high-efficiency IGBT for high-voltage, high-current applications. Its low switching losses, thermal resilience, and compliance with environmental standards make it a preferred choice for industrial, automotive, and renewable energy systems. Engineers benefit from its balanced performance in speed and power handling, backed by STMicroelectronics' proven PowerMESH™ technology. Whether for motor control, power conversion, or energy infrastructure, this device delivers reliability, efficiency, and longevity.
Download datasheets and manufacturer documentation for STGWF30NC60S