The STGB10NC60HDT4 is a high-performance IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics, designed for demanding power management applications. With a collector-emitter breakdown voltage of 600V and a maximum collector current of 20A, this device offers exceptional performance in high-power switching applications. The STGB10NC60HDT4 is part of the PowerMESH™ series and is available in a D2PAK package, making it suitable for surface-mount applications.
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The STGB10NC60HDT4 is ideal for a wide range of high-power switching applications, including:
The STGB10NC60HDT4 from STMicroelectronics is a powerful IGBT designed for high-power switching applications. Its combination of high current and voltage ratings, fast switching times, and low on-state voltage drop make it an excellent choice for demanding power management tasks. With its compliance with industry standards and availability in a surface-mount package, the STGB10NC60HDT4 is a versatile solution for a wide range of applications in the electronics industry.
Download datasheets and manufacturer documentation for STGB10NC60HDT4