The STGB19NC60HDT4 is a high-performance IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics, designed for power electronics applications. With a maximum collector-emitter breakdown voltage of 600V and a maximum collector current of 40A, this device is suitable for a wide range of power conversion and control applications. The STGB19NC60HDT4 is available in a D2PAK package, making it ideal for surface-mount applications.
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The STGB19NC60HDT4 is ideal for a variety of high-power applications, including:
The STGB19NC60HDT4 from STMicroelectronics is a high-performance IGBT designed for demanding power electronics applications. Its combination of high current and voltage ratings, fast switching times, and low on-state voltage drop make it an excellent choice for a wide range of applications, including industrial motor control, power supplies, renewable energy systems, and electric vehicles. With its REACH Unaffected and RoHS3 Compliant status, the STGB19NC60HDT4 is also an environmentally responsible choice for your power electronics needs.
Download datasheets and manufacturer documentation for STGB19NC60HDT4