STMicroelectronics

STGD3NB60SDT4  

Single IGBTs

STGD3NB60SDT4 Description

The STGD3NB60SDT4 is a high-performance, single insulated gate bipolar transistor (IGBT) designed and manufactured by STMicroelectronics. This device is part of the PowerMESH™ series and is known for its superior electrical characteristics, making it ideal for various high-power applications. With a maximum collector-emitter breakdown voltage of 600V and a maximum collector current of 6A, the STGD3NB60SDT4 is capable of handling high power levels while maintaining efficiency and reliability.

STGD3NB60SDT4 Features

• Technical Specifications:

  • Reverse Recovery Time (trr): 1.7 µs
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 6 A
  • Current - Collector Pulsed (Icm): 25 A
  • Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 3A
  • Gate Charge: 18 nC
  • Power - Max: 48 W
  • Operating Temperature: 175°C (TJ)
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • RoHS Status: ROHS3 Compliant
  • REACH Status: REACH Unaffected

• Performance Benefits:

  • The STGD3NB60SDT4 offers low on-state voltage (Vce(on)), which results in reduced power loss and increased efficiency.
  • Its fast reverse recovery time (trr) contributes to lower switching losses, making it suitable for high-speed applications.
  • The device's high current handling capability and robust power dissipation make it ideal for demanding power electronic applications.

• Unique Features and Advantages:

  • The STGD3NB60SDT4 is designed to operate in a wide range of temperatures, making it suitable for various environments.
  • The device's compliance with RoHS3 and REACH regulations ensures environmental friendliness and adherence to global standards.
  • The STGD3NB60SDT4 is available in a DPAK package, which offers excellent thermal performance and ease of integration into surface mount applications.

STGD3NB60SDT4 Applications

The STGD3NB60SDT4 is ideal for a variety of high-power applications, including:

• Industrial Motor Control: Due to its high current and voltage ratings, the STGD3NB60SDT4 is well-suited for motor control applications in industrial settings.
• Power Supplies: The device's low on-state voltage and high power dissipation make it an excellent choice for power supply designs.
• Renewable Energy Systems: The STGD3NB60SDT4 can be used in solar inverters and wind energy systems, where high efficiency and reliability are crucial.
• Electric Vehicles: The device's ability to handle high currents and voltages makes it suitable for electric vehicle charging systems and power electronics.

Conclusion of STGD3NB60SDT4

The STGD3NB60SDT4 is a powerful, reliable, and efficient IGBT designed for high-power applications. Its unique combination of technical specifications, performance benefits, and compliance with global standards make it an ideal choice for a wide range of applications. With its robust design and superior electrical characteristics, the STGD3NB60SDT4 stands out as a top choice for engineers and designers looking to optimize their power electronic systems.

STGD3NB60SDT4 Documents

Download datasheets and manufacturer documentation for STGD3NB60SDT4

PCN Assembly/Origin :

STGD3NB60SDT4 17/Nov/2022      

Datasheets :

STGD3NB60SD      

PCN Packaging :

Box Label Chg 28/Jul/2016      

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HTML Datasheet :

STGD3NB60SD