STMicroelectronics_STGWA40IH65DF

STMicroelectronics
STGWA40IH65DF  
Single IGBTs

STMicroelectronics
STGWA40IH65DF
279-STGWA40IH65DF
Ersa
STMicroelectronics-STGWA40IH65DF-datasheets-4611245.pdf
TRENCH GATE FIELD-STOP 650 V 40
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STGWA40IH65DF Description

STGWA40IH65DF Description

The STGWA40IH65DF from STMicroelectronics is a high-performance 650V, 40A Trench Field Stop IGBT designed for demanding power electronics applications. This ROHS3 Compliant and REACH Unaffected device features a low Vce(on) of 2V @ 15V, 40A, ensuring minimal conduction losses and high efficiency. With a maximum collector current (Ic) of 80A and pulsed current (Icm) of 120A, it delivers robust performance in high-power switching scenarios. The Trench Field Stop technology enhances switching efficiency, reducing energy losses (190µJ turn-off energy) and improving thermal management. Packaged in a through-hole tube, it is suitable for industrial environments requiring reliability and durability.

STGWA40IH65DF Features

  • 650V Collector-Emitter Breakdown Voltage: Ideal for high-voltage applications.
  • Low Vce(on) (2V @ 15V, 40A): Minimizes power dissipation.
  • High Current Handling (80A continuous, 120A pulsed): Supports high-load conditions.
  • Trench Field Stop IGBT Technology: Enhances switching speed and reduces losses.
  • Low Gate Charge (114nC): Improves driving efficiency.
  • 238W Maximum Power Dissipation: Ensures thermal stability.
  • MSL 1 (Unlimited): Suitable for extended storage and handling.

STGWA40IH65DF Applications

This IGBT is optimized for:

  • Motor Drives: High-efficiency control in industrial and automotive systems.
  • Power Supplies: Switching regulators and UPS systems.
  • Renewable Energy: Inverters for solar and wind power conversion.
  • Welding Equipment: Reliable performance in high-current environments.
  • Induction Heating: Fast switching for precision heating applications.

Conclusion of STGWA40IH65DF

The STGWA40IH65DF stands out for its low conduction losses, high current capability, and rugged design, making it a superior choice for high-power switching applications. Its Trench Field Stop technology ensures efficiency and thermal performance, while compliance with ROHS3 and REACH underscores its environmental suitability. Engineers can leverage this IGBT in industrial, automotive, and renewable energy systems where reliability and efficiency are critical.

Tech Specifications

Configuration
PPAP
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
Supplier Package
Package / Case
Typical Collector Emitter Saturation Voltage (V)
REACH Status
Channel Type
Maximum Gate Emitter Voltage (V)
EU RoHS
IGBT Type
Moisture Sensitivity Level (MSL)
Operating Temperature
Test Condition
Current - Collector (Ic) (Max)
ECCN
Supplier Temperature Grade
Mounting Type
Standard Package Name
Current - Collector Pulsed (Icm)
Pin Count
Mounting
Maximum Gate Emitter Leakage Current (uA)
Gate Charge
Lead Shape
HTSUS
Package
PCB changed
HTS
Maximum Collector-Emitter Voltage (V)
ECCN (US)
Maximum Power Dissipation (mW)
Td (on/off) @ 25°C
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
Input Type
Switching Energy
Maximum Continuous Collector Current (A)
Package Length
Series
Vce(on) (Max) @ Vge, Ic
Tab
Power - Max
Part Status
Package Width
Base Product Number
Mounting Style
Unit Weight
Gate-Emitter Leakage Current
RoHS
Minimum Operating Temperature
Technology
Continuous Collector Current Ic Max
Collector-Emitter Saturation Voltage
Collector- Emitter Voltage VCEO Max
Continuous Collector Current at 25 C
Maximum Operating Temperature
Pd - Power Dissipation
USHTS
Maximum Gate Emitter Voltage

STGWA40IH65DF Documents

Download datasheets and manufacturer documentation for STGWA40IH65DF

Ersa Assembly Site 06/Apr/2023      
Ersa STGWA40IH65DF Datasheet      

Shopping Guide

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