The STGW40H120DF2 is a high-performance, single IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics, designed for high-power applications. It features a Trench Field Stop IGBT type, offering superior performance in terms of switching speed and efficiency. With a maximum collector-emitter breakdown voltage of 1200V and a maximum collector current of 40A, this device is well-suited for demanding applications.
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The STGW40H120DF2 is ideal for a wide range of high-power applications, including:
The STGW40H120DF2 from STMicroelectronics is a high-performance IGBT designed for demanding high-power applications. Its unique combination of technical specifications, performance benefits, and versatile mounting options make it an ideal choice for a wide range of applications, including industrial motor control, power supplies, renewable energy systems, and electric vehicles. With its competitive advantages over similar models, the STGW40H120DF2 is a reliable and efficient solution for high-power electronics design.
Download datasheets and manufacturer documentation for STGW40H120DF2