The STGB10NB37LZ from STMicroelectronics is a high-performance N-channel IGBT (Insulated Gate Bipolar Transistor) designed for power switching applications. With a collector-emitter breakdown voltage (VCES) of 440V and a maximum collector current (IC) of 20A, this device is optimized for efficiency and reliability in medium-power circuits. It features a low VCE(on) of 1.8V @ 4.5V, 10A, ensuring minimal conduction losses, and offers fast switching characteristics with turn-on/off delays of 1.3µs and 8µs, respectively. The PowerMESH™ technology enhances thermal performance, supporting a maximum power dissipation of 125W. Packaged in a D2PAK (TO-263) surface-mount format, it is suitable for automated assembly processes.
This IGBT is ideal for:
The STGB10NB37LZ combines high voltage tolerance, low conduction losses, and fast switching in a compact surface-mount package, making it a versatile choice for power electronics. While now obsolete, its PowerMESH™ technology and balanced performance metrics historically made it a preferred option for demanding applications. Engineers seeking modern alternatives should consider newer STMicroelectronics IGBTs with similar or enhanced specifications.
Download datasheets and manufacturer documentation for STGB10NB37LZ