STMicroelectronics_STGB10NB37LZ

STMicroelectronics
STGB10NB37LZ  
Single IGBTs

STMicroelectronics
STGB10NB37LZ
279-STGB10NB37LZ
IGBT 440V 20A 125W D2PAK
In Stock : 1010

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STGB10NB37LZ Description

STGB10NB37LZ Description

The STGB10NB37LZ from STMicroelectronics is a high-performance N-channel IGBT (Insulated Gate Bipolar Transistor) designed for power switching applications. With a collector-emitter breakdown voltage (VCES) of 440V and a maximum collector current (IC) of 20A, this device is optimized for efficiency and reliability in medium-power circuits. It features a low VCE(on) of 1.8V @ 4.5V, 10A, ensuring minimal conduction losses, and offers fast switching characteristics with turn-on/off delays of 1.3µs and 8µs, respectively. The PowerMESH™ technology enhances thermal performance, supporting a maximum power dissipation of 125W. Packaged in a D2PAK (TO-263) surface-mount format, it is suitable for automated assembly processes.

STGB10NB37LZ Features

  • High Voltage & Current Handling: 440V VCES and 20A IC (40A pulsed) for robust performance.
  • Low Switching Losses: 2.4mJ (on) and 5mJ (off) switching energy improves efficiency in high-frequency applications.
  • Optimized Gate Drive: 28nC gate charge reduces drive requirements, enabling faster switching.
  • Thermal Efficiency: PowerMESH™ design ensures superior heat dissipation.
  • Compliance: ROHS3 and REACH compliant, with MSL1 (Unlimited) moisture sensitivity for extended shelf life.
  • Surface-Mount Package: D2PAK allows compact PCB integration.

STGB10NB37LZ Applications

This IGBT is ideal for:

  • Motor Drives: Efficient control in industrial and automotive systems.
  • Switched-Mode Power Supplies (SMPS): High-efficiency DC-DC or AC-DC converters.
  • Inverters: Renewable energy systems (solar/wind) and UPS units.
  • Induction Heating: Fast switching for precise temperature control.
  • Welding Equipment: Reliable high-current switching.

Conclusion of STGB10NB37LZ

The STGB10NB37LZ combines high voltage tolerance, low conduction losses, and fast switching in a compact surface-mount package, making it a versatile choice for power electronics. While now obsolete, its PowerMESH™ technology and balanced performance metrics historically made it a preferred option for demanding applications. Engineers seeking modern alternatives should consider newer STMicroelectronics IGBTs with similar or enhanced specifications.

Tech Specifications

Product Status
Voltage - Collector Emitter Breakdown (Max)
Td (on/off) @ 25°C
Supplier Device Package
Package / Case
REACH Status
Mfr
IGBT Type
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
Input Type
Test Condition
Switching Energy
Current - Collector (Ic) (Max)
ECCN
Mounting Type
Current - Collector Pulsed (Icm)
Series
Vce(on) (Max) @ Vge, Ic
Gate Charge
Power - Max
HTSUS
Package
Base Product Number

STGB10NB37LZ Documents

Download datasheets and manufacturer documentation for STGB10NB37LZ

Ersa STG(B,P)10NB37LZ      
Ersa IPD/15/9345 04/Aug/2015      
Ersa STG(B,P)10NB37LZ      
Ersa D2PAK Lead Modification 04/Oct/2013      

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