STMicroelectronics_STGW39NC60VD
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STMicroelectronics
STGW39NC60VD

279-STGW39NC60VD
600V 40A Very Fast IGBT Transistor TO-247
12 Weeks

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Tech Specifications

Package/Case
TO-247
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.8V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.4V
Continuous Drain Current (ID)
40A
Current Rating
40A
Drain to Source Voltage (Vdss)
600V
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STGW39NC60VD Description

STMicroelectronics' STGW39NC60VD is a high voltage N-channel MOSFET transistor. It is designed for use in a variety of applications, including power electronics and motor control.

Description:

The STGW39NC60VD is an N-channel enhancement mode field effect transistor. It is a three-pin device with a source, drain, and gate. The transistor is designed to operate at high voltages and currents, making it suitable for use in power electronics and motor control applications.

Features:

  • High voltage and current handling capability
  • N-channel enhancement mode
  • Three-pin configuration
  • Suitable for use in power electronics and motor control applications

Applications:

The STGW39NC60VD can be used in a variety of applications, including:

  • Power electronics
  • Motor control
  • High voltage switching
  • Inverters
  • Converters

Overall, the STGW39NC60VD is a versatile and high-performance MOSFET transistor that is well-suited for use in a range of power electronics and motor control applications. Its high voltage and current handling capabilities make it a reliable choice for demanding applications.

FAQ

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Yes. STGW39NC60VD currently shows 13444 unit(s) in stock.
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Availability (In Stock : 13444 )
Quantity Unit Price Ext. Price
10+ $1.88400 $18.84
30+ $1.65772 $49.73
100+ $1.42457 $142.46
500+ $1.32000 $660.00
1000+ $1.27543 $1275.43
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