STMicroelectronics

STGF10M65DF2  

Single IGBTs

STGF10M65DF2 Description

The STGF10M65DF2 is a high-performance, single IGBT (Insulated Gate Bipolar Transistor) from STMicroelectronics. This device is designed for applications that require efficient power switching and control. With a maximum collector-emitter breakdown voltage of 650V and a maximum collector current of 20A, the STGF10M65DF2 is well-suited for a variety of power electronics applications.

STGF10M65DF2 Features

• Trench Field Stop IGBT Technology: The STGF10M65DF2 utilizes a trench field stop IGBT structure, which provides improved switching performance and reduced conduction losses compared to planar IGBTs.
• Low Switching Energy: With switching energies of 120µJ (on) and 270µJ (off), the STGF10M65DF2 offers efficient power switching with minimal energy loss.
• Fast Switching Speed: The device has a fast switching time of 19ns (on) and 91ns (off) at 25°C, enabling high-speed operation in power electronics applications.
• Low On-State Voltage Drop: The STGF10M65DF2 has a low on-state voltage drop of 2V at 15V gate voltage and 10A collector current, reducing power dissipation and improving efficiency.
• Robust Gate Drive: The device features a gate charge of 28 nC, ensuring reliable and consistent gate drive performance.
• Through-Hole Mounting: The STGF10M65DF2 is available in a through-hole TO220FP package, providing a secure and reliable mechanical connection for high-power applications.

STGF10M65DF2 Applications

The STGF10M65DF2 is ideal for a variety of power electronics applications, including:

• Industrial Motor Control: The device's high voltage and current ratings make it suitable for motor control applications, such as and variable frequency drives.
• Power Supplies: The STGF10M65DF2 can be used in power supply designs, such as uninterruptible power supplies (UPS) and switch-mode power supplies (SMPS), where efficient power switching is critical.
• Renewable Energy Systems: The device's robust performance and low switching losses make it well-suited for renewable energy applications, such as solar inverters and wind power systems.
• Electric Vehicle Charging: The STGF10M65DF2 can be used in electric vehicle charging systems, where high efficiency and reliability are essential.

Conclusion of STGF10M65DF2

The STGF10M65DF2 is a high-performance, single IGBT from STMicroelectronics that offers a combination of high voltage and current ratings, fast switching speeds, and low on-state voltage drop. Its trench field stop technology and robust gate drive make it an ideal choice for a variety of power electronics applications, including motor control, power supplies, renewable energy systems, and electric vehicle charging. With its unique features and advantages, the STGF10M65DF2 stands out as a reliable and efficient solution for demanding power switching applications.

STGF10M65DF2 Documents

Download datasheets and manufacturer documentation for STGF10M65DF2

PCN :

Product Change Notification 2024-03-12 (PDF)