STMicroelectronics

STP22NM60N

STP22NM60N is a high-power N-channel MOSFET from STMicroelectronics. It is designed for use in a wide range of applications, including motor control, power supplies, and automotive systems.

Description:

The STP22NM60N is an N-channel enhancement mode field-effect transistor (MOSFET). It is a three-terminal device that uses a gate-source voltage to control the flow of current between the drain and source terminals. The device has a maximum drain-source voltage (VDS) of 600V and a continuous drain current (ID) of 22A.

Features:

• N-channel, enhancement mode MOSFET
• Maximum drain-source voltage (VDS) of 600V
• Continuous drain current (ID) of 22A
• Low on-state resistance (RDS(on))
• High switching speed
• Logic level gate drive compatible
• Suitable for use in a wide range of applications

Applications:

The STP22NM60N is suitable for use in a wide range of applications, including:

• Motor control
• Power supplies
• Automotive systems
• Industrial control
• Battery management systems
• Switch mode power supplies (SMPS)
• Class D audio amplifiers
• High voltage switching applications

In summary, the STP22NM60N is a high-power N-channel MOSFET that offers a combination of high voltage and high current handling capabilities. It is suitable for use in a wide range of applications where high efficiency and fast switching are required.