STMicroelectronics_STF22NM60N

STMicroelectronics
STF22NM60N  
Single FETs, MOSFETs

STMicroelectronics
STF22NM60N
278-STF22NM60N
Ersa
STMicroelectronics-STF22NM60N-datasheets-7457120.pdf
N-channel 600 V, 0.2 Ohm, 16 A M
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    STF22NM60N Description

    STF22NM60N is a high-power, high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by STMicroelectronics. It is designed for use in a wide range of applications, including power electronics, motor control, and automotive systems.

    Description:

    The STF22NM60N is a N-channel enhancement mode MOSFET with a voltage rating of 600V and a continuous drain current (Id) of 22A. It is available in a TO-220 package, which is a popular and widely used package for power MOSFETs.

    Features:

    1. High voltage rating: The STF22NM60N can handle voltages up to 600V, making it suitable for high-voltage applications.
    2. High current capability: With a continuous drain current of 22A, the STF22NM60N can handle high current loads.
    3. Low on-state resistance (RDS(on)): The device has a low on-state resistance, which helps to minimize power dissipation and improve efficiency.
    4. Fast switching speed: The STF22NM60N has a fast switching speed, which makes it suitable for high-frequency applications.
    5. High temperature operation: The device can operate in a wide temperature range of -55°C to 175°C, making it suitable for harsh environments.

    Applications:

    1. Power electronics: The STF22NM60N can be used in power electronic applications such as power supplies, converters, and inverters.
    2. Motor control: The device is suitable for motor control applications, including brushless DC (BLDC) motors and AC induction motors.
    3. Automotive systems: The STF22NM60N can be used in various automotive applications, such as electric power steering, window lift systems, and air conditioning compressors.
    4. Industrial control: The MOSFET can be used in industrial control applications, such as servo motor drives and robotic systems.
    5. Renewable energy: The STF22NM60N can be used in renewable energy applications, such as solar panel power conditioning systems and wind turbine converters.

    In summary, the STF22NM60N is a high-power, high-voltage N-channel MOSFET with features like low on-state resistance, fast switching speed, and high temperature operation. It is suitable for a wide range of applications, including power electronics, motor control, automotive systems, industrial control, and renewable energy.

    Tech Specifications

    Unit Weight
    Configuration
    Typical Turn-Off Delay Time (ns)
    Id - Continuous Drain Current
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Fall Time
    Automotive
    RoHS
    Drain to Source Voltage (Vdss)
    Supplier Package
    Tradename
    Transistor Type
    Package / Case
    Number of Channels
    Typical Turn-On Delay Time
    Technology
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Rds On - Drain-Source Resistance
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Rise Time
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    SVHC
    Drive Voltage (Max Rds On, Min Rds On)
    Vgs th - Gate-Source Threshold Voltage
    HTSUS
    Package
    USHTS
    Typical Gate Charge @ Vgs (nC)
    Typical Input Capacitance @ Vds (pF)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Qg - Gate Charge
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Mfr
    Vgs (Max)
    Maximum Operating Temperature
    RoHS Status
    Mounting Style
    FET Feature
    Maximum Gate Source Voltage (V)
    SVHC Exceeds Threshold
    Vgs - Gate-Source Voltage
    Typical Turn-Off Delay Time
    Transistor Polarity
    Package Length
    Typical Gate Charge @ 10V (nC)
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Series
    Tab
    Part Status
    Package Width
    Pd - Power Dissipation
    Base Product Number
    Operating Range
    Grade
    ECCN (EU)
    RoHs compliant

    STF22NM60N Documents

    Download datasheets and manufacturer documentation for STF22NM60N

    Ersa IPG-PWR/14/8603 21/Jul/2014      
    Ersa STx22NM60N      
    Ersa Box Label Chg 28/Jul/2016      
    Ersa STF22NM60N View All Specifications      
    Ersa STx22NM60N      
    Ersa Marking Layout 10/May/2023      

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