The STW30N80K5 from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power applications. Built using MDmesh™ K5 technology, it offers an optimal balance of low on-resistance (180mΩ @ 12A, 10V) and high voltage capability (800V Vdss), making it ideal for high-efficiency switching applications. With a continuous drain current (Id) of 24A (Tc) and a maximum power dissipation of 250W (Tc), this device excels in high-power environments. The TO-247-3 package ensures robust thermal performance, while its low gate charge (43nC @ 10V) and input capacitance (1530pF @ 100V) contribute to reduced switching losses.
The STW30N80K5 stands out as a high-efficiency, high-voltage MOSFET with superior switching performance and thermal management. Its MDmesh™ K5 technology ensures low losses, while the TO-247-3 package provides mechanical and thermal robustness. Whether in power supplies, motor drives, or renewable energy systems, this MOSFET delivers reliability, efficiency, and performance, making it a top choice for engineers designing high-power applications.
Download datasheets and manufacturer documentation for STW30N80K5