STMicroelectronics_STW30N80K5

STMicroelectronics
STW30N80K5  
Single FETs, MOSFETs

STMicroelectronics
STW30N80K5
278-STW30N80K5
Ersa
STMicroelectronics-STW30N80K5-datasheets-9088167.pdf
MOSFET N-CH 800V 24A TO247-3
In Stock : 600

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STW30N80K5 Description

STW30N80K5 Description

The STW30N80K5 from STMicroelectronics is a high-performance N-channel MOSFET designed for demanding power applications. Built using MDmesh™ K5 technology, it offers an optimal balance of low on-resistance (180mΩ @ 12A, 10V) and high voltage capability (800V Vdss), making it ideal for high-efficiency switching applications. With a continuous drain current (Id) of 24A (Tc) and a maximum power dissipation of 250W (Tc), this device excels in high-power environments. The TO-247-3 package ensures robust thermal performance, while its low gate charge (43nC @ 10V) and input capacitance (1530pF @ 100V) contribute to reduced switching losses.

STW30N80K5 Features

  • High Voltage Rating: 800V drain-to-source voltage (Vdss) for reliable operation in high-voltage circuits.
  • Low Rds(on): 180mΩ @ 12A, 10V minimizes conduction losses, improving efficiency.
  • Fast Switching: Low Qg (43nC) and Ciss (1530pF) enable high-frequency operation.
  • Robust Thermal Performance: TO-247-3 package with 250W power dissipation ensures durability under high loads.
  • Wide Drive Voltage Range: Vgs(max) of ±30V with optimized performance at 10V drive voltage.
  • Reliability: ROHS3 compliant, REACH unaffected, and MSL 1 (unlimited) for long-term stability.

STW30N80K5 Applications

  • Switched-Mode Power Supplies (SMPS): High efficiency and voltage handling make it ideal for AC-DC converters and PFC stages.
  • Motor Drives & Inverters: Suitable for industrial motor control and HVAC systems due to low conduction losses.
  • Renewable Energy Systems: Used in solar inverters and wind power converters for high-voltage switching.
  • Industrial Automation: Reliable performance in high-power switching circuits and UPS systems.

Conclusion of STW30N80K5

The STW30N80K5 stands out as a high-efficiency, high-voltage MOSFET with superior switching performance and thermal management. Its MDmesh™ K5 technology ensures low losses, while the TO-247-3 package provides mechanical and thermal robustness. Whether in power supplies, motor drives, or renewable energy systems, this MOSFET delivers reliability, efficiency, and performance, making it a top choice for engineers designing high-power applications.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

STW30N80K5 Documents

Download datasheets and manufacturer documentation for STW30N80K5

Ersa Spice Model Tutorial for Power MOSFETS       STW30N80K5      
Ersa Standard outer labelling 15/Nov/2023      
Ersa Spice Model Tutorial for Power MOSFETS       STW30N80K5      

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