The STL150N3LLH6 from STMicroelectronics is an N-channel 30V, 150A power MOSFET designed for high-efficiency power management applications. Part of the DeepGATE™ and STripFET™ VI series, it leverages advanced Metal Oxide (MOSFET) technology to deliver ultra-low Rds(on) of 2.4mΩ at 10V Vgs, minimizing conduction losses. Packaged in a PowerFlat™ (5x6), this surface-mount device is optimized for high-current switching in compact designs. Though marked Obsolete, it remains a robust choice for legacy systems requiring high power density and thermal performance, with a maximum power dissipation of 80W (Tc).
STL150N3LLH6 Features
Low On-Resistance: 2.4mΩ @ 16.5A, 10V ensures minimal power loss in high-current paths.
High Current Handling: 150A continuous drain current (Tc) supports demanding loads.
Fast Switching: Gate charge (Qg) of 40nC @ 4.5V and input capacitance (Ciss) of 4040pF @ 25V enable efficient high-frequency operation.
Robust Gate Drive: Vgs(max) of ±20V and threshold voltage (Vgs(th)) of 1V @ 250µA ensure reliable control.
Compact Packaging: PowerFlat™ (5x6) offers superior thermal resistance and space savings.
Compliance: ROHS3 and REACH Unaffected, with MSL 1 (Unlimited) for extended shelf life.
STL150N3LLH6 Applications
DC-DC Converters: Ideal for synchronous buck/boost topologies due to low Rds(on) and high current capability.
Motor Drives: Efficiently controls high-power brushed/BLDC motors in automotive and industrial systems.
Power Supplies: Suits server/telecom PSUs requiring high efficiency and thermal stability.
Battery Management: Used in discharge protection circuits for Li-ion packs in EVs and energy storage.
Load Switches: Enables fast switching in hot-swap and ORing applications.
Conclusion of STL150N3LLH6
The STL150N3LLH6 excels in high-current, low-voltage applications where minimized conduction losses and compact footprint are critical. Its DeepGATE™ technology and PowerFlat™ package make it a standout for legacy designs needing reliability in thermal management and power density. While obsolete, its performance metrics—such as 150A Id and 2.4mΩ Rds(on)—ensure it remains viable for replacements in industrial, automotive, and power electronics systems.
Tech Specifications
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
REACH Status
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Unit Weight
Configuration
Id - Continuous Drain Current
Channel Mode
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Length
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS
STL150N3LLH6 Documents
Download datasheets and manufacturer documentation for STL150N3LLH6
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