Diodes Incorporated_DMG6898LSD-13
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Diodes Incorporated
DMG6898LSD-13

289-DMG6898LSD-13
PDF Datasheet
MOSFET 2N-CH 20V 9.5A 8SO
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Tech Specifications

Configuration
2 N-Channel (Dual)
Typical Turn-Off Delay Time (ns)
35.89
Maximum Gate Source Leakage Current (nA)
10000
Input Capacitance (Ciss) (Max) @ Vds
1149pF @ 10V
Gate Charge (Qg) (Max) @ Vgs
26nC @ 10V
Typical Rise Time (ns)
12.49
PPAP
No
Channel Mode
Enhancement
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DMG6898LSD-13 Description

DMG6898LSD-13 Description

The DMG6898LSD-13 is a high-performance MOSFET (Metal Oxide) device from Diodes Incorporated, designed for a wide range of applications in the electronics industry. This 2N-channel device offers superior performance with a maximum drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 9.5A at 25°C. The DMG6898LSD-13 is designed for surface mount applications and is available in an 8-pin SOIC package.

DMG6898LSD-13 Features

  • Logic Level Gate: The DMG6898LSD-13 features a logic level gate, making it compatible with low-voltage logic circuits.
  • Low Input Capacitance: With a maximum input capacitance (Ciss) of 1149pF @ 10V, this device offers fast switching speeds and low power consumption.
  • Low Gate Charge: The maximum gate charge (Qg) is 26nC @ 10V, reducing switching losses and improving efficiency.
  • Low Rds On: The maximum Rds On is 16mOhm @ 9.4A, 4.5V, ensuring low on-resistance and high efficiency.
  • Wide Voltage Range: The DMG6898LSD-13 operates over a wide voltage range, making it suitable for various applications.
  • Compliance: This device is REACH unaffected, RoHS3 compliant, and classified under ECCN EAR99, ensuring compliance with international regulations.

DMG6898LSD-13 Applications

The DMG6898LSD-13 is ideal for a variety of applications where high efficiency, low power consumption, and fast switching speeds are required. Some specific use cases include:

  1. Power Management: In power supply circuits, the DMG6898LSD-13 can efficiently manage power distribution with its low Rds On and high current handling capabilities.
  2. Motor Control: This MOSFET is suitable for motor control applications due to its high current and voltage ratings, providing reliable performance in demanding environments.
  3. Automotive Electronics: The DMG6898LSD-13 can be used in automotive electronics for power management and motor control, benefiting from its robust design and compliance with international regulations.
  4. Industrial Control: In industrial control systems, this MOSFET can provide reliable performance in high-voltage and high-current applications, ensuring efficient operation.

Conclusion of DMG6898LSD-13

The DMG6898LSD-13 from Diodes Incorporated is a high-performance MOSFET designed for a wide range of applications in the electronics industry. Its unique features, such as low input capacitance, low gate charge, and low Rds On, make it an ideal choice for power management, motor control, automotive electronics, and industrial control systems. With its compliance with international regulations and robust design, the DMG6898LSD-13 offers a reliable and efficient solution for demanding applications.

FAQ

What is DMG6898LSD-13?
DMG6898LSD-13 is a FET, MOSFET Arrays from Diodes Incorporated. This product page provides its main specifications, pricing information, availability, and inquiry options.
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Availability (In Stock : 6917 )
Quantity Unit Price Ext. Price
5+ $0.39293 $1.96
50+ $0.31388 $15.69
150+ $0.28000 $42.00
500+ $0.23772 $118.86
2500+ $0.21889 $547.23
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