onsemi_MUN5230DW1T1G
original

onsemi
MUN5230DW1T1G

293-MUN5230DW1T1G
PDF Datasheet
Dual NPN BJT Transistor, 50V, 100mA, SOT-363-6
11 Weeks

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Tech Specifications

Package/Case
SOT-363-6
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
250mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
100mA
Current Rating
100mA
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MUN5230DW1T1G Description

MUN5230DW1T1G Description

The MUN5230DW1T1G is a Bipolar Transistor Array from onsemi, designed for pre-biased applications. This product stands out for its high performance and reliability, making it suitable for a wide range of electronic devices. With a maximum collector current of 100mA and a collector-emitter breakdown voltage of 50V, the MUN5230DW1T1G offers excellent electrical characteristics. Its surface mount packaging and tape & reel packaging make it easy to integrate into various designs.

MUN5230DW1T1G Features

  • Technical Specifications:

    • Maximum Collector Current (Ic): 100mA
    • Base Resistor (R1): 1kOhms
    • Emitter Base Resistor (R2): 1kOhms
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
    • Maximum Power Dissipation: 250mW
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
    • Maximum Collector Cutoff Current: 500nA
    • Voltage - Collector Emitter Breakdown (Max): 50V
  • Performance Benefits:

    • Pre-biased design for simplified circuit design and reduced external components
    • High current gain for efficient signal amplification
    • Low saturation voltage for improved power efficiency
  • Unique Advantages:

    • Moisture Sensitivity Level (MSL) 1, allowing for unlimited storage time
    • RoHS3 compliant, making it suitable for environmentally friendly applications
    • Active product status, ensuring ongoing availability and support

MUN5230DW1T1G Applications

The MUN5230DW1T1G is ideal for various applications where pre-biased transistor arrays are required. Some specific use cases include:

  • Audio Amplifiers: Utilizing its high current gain and low saturation voltage, the MUN5230DW1T1G can efficiently amplify audio signals in consumer electronics.
  • Signal Conditioning: The pre-biased design simplifies circuitry, making it suitable for signal conditioning in industrial and automotive applications.
  • Power Management: Its ability to handle up to 250mW of power dissipation makes it suitable for power management circuits in various electronic devices.

Conclusion of MUN5230DW1T1G

The MUN5230DW1T1G from onsemi is a high-performance Bipolar Transistor Array designed for pre-biased applications. Its unique combination of technical specifications, performance benefits, and unique advantages make it an ideal choice for a wide range of electronic devices. Whether used in audio amplifiers, signal conditioning, or power management applications, the MUN5230DW1T1G offers reliable performance and simplified circuit design.

FAQ

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Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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Availability (In Stock : 158 )
Quantity Unit Price Ext. Price
5+ $0.35704 $1.79
50+ $0.28411 $14.21
150+ $0.25285 $37.93
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