Diodes Incorporated_DMN2230UQ-7
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Diodes Incorporated
DMN2230UQ-7

278-DMN2230UQ-7
PDF Datasheet
MOSFET N-CH 20V 2A SOT23
8 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
19.6
Maximum Gate Source Leakage Current (nA)
10000
Input Capacitance (Ciss) (Max) @ Vds
188 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs
2.3 nC @ 10 V
Typical Rise Time (ns)
3.8
PPAP
Yes
Channel Mode
Enhancement
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DMN2230UQ-7 Description

DMN2230UQ-7 Description

The DMN2230UQ-7 is a high-performance N-Channel MOSFET from Diodes Incorporated, designed for applications requiring high efficiency and reliability. This MOSFET features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 2A at 25°C, making it suitable for a wide range of power management and switching applications.

DMN2230UQ-7 Features

  • Technology: MOSFET (Metal Oxide) - This advanced technology offers excellent electrical performance and reliability.
  • Input Capacitance (Ciss): 188 pF @ 10V - Low input capacitance for faster switching speeds and reduced power consumption.
  • Gate Charge (Qg): 2.3 nC @ 10V - Low gate charge for efficient gate drive and reduced switching losses.
  • Rds On (Max): 110mΩ @ 2.5A, 4.5V - Low on-resistance for minimal power dissipation and high efficiency.
  • Vgs(th) (Max): 1V @ 250µA - Low threshold voltage for easy gate drive and reduced power consumption.
  • Drive Voltage: 1.8V (Max Rds On), 4.5V (Min Rds On) - Wide range of gate drive voltages for compatibility with various gate drivers.
  • Power Dissipation (Max): 600mW (Ta) - Suitable for applications with moderate power dissipation requirements.
  • Mounting Type: Surface Mount - Ideal for compact and space-constrained designs.
  • Package: Tape & Reel (TR) - Convenient for automated assembly and high-volume production.

DMN2230UQ-7 Applications

The DMN2230UQ-7 is ideal for various applications where high efficiency, reliability, and compact form factor are critical. Some specific use cases include:

  1. Power Management: In power supply designs, the DMN2230UQ-7 can be used as a high-side or low-side switch to efficiently manage power distribution.
  2. Motor Control: The low on-resistance and high current capability make it suitable for driving small to medium-sized motors in applications like fans, pumps, and robotics.
  3. Automotive: The DMN2230UQ-7 can be used in automotive applications such as window lifts, mirrors, and lighting systems, where reliability and performance are essential.
  4. Industrial Control: In industrial control systems, the DMN2230UQ-7 can be used for motor drives, relay control, and power conversion.

Conclusion of DMN2230UQ-7

The DMN2230UQ-7 is a versatile and high-performance N-Channel MOSFET from Diodes Incorporated, offering excellent electrical characteristics and reliability. Its low on-resistance, low gate charge, and wide range of gate drive voltages make it an ideal choice for various power management, motor control, automotive, and industrial control applications. With its compact surface-mount package and tape & reel packaging, the DMN2230UQ-7 is well-suited for high-volume production and space-constrained designs.

FAQ

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Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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Availability (In Stock : 11 )
Quantity Unit Price Ext. Price
5+ $0.26312 $1.32
50+ $0.20524 $10.26
150+ $0.18043 $27.06
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