Diodes Incorporated_DMN2990UFA-7B
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Diodes Incorporated
DMN2990UFA-7B

278-DMN2990UFA-7B
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MOSFET N-CH 20V 510MA 3DFN
8 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
19
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
27.6 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs
0.5 nC @ 4.5 V
Typical Rise Time (ns)
3.3
PPAP
No
Channel Mode
Enhancement
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DMN2990UFA-7B Description

DMN2990UFA-7B Description

The DMN2990UFA-7B is a high-performance MOSFET N-CH 20V 510mA 3DFN transistor manufactured by Diodes Incorporated. This device is designed for applications requiring high input capacitance, low gate charge, and excellent switching performance. With a maximum drain-source voltage of 20V and a continuous drain current of 510mA at 25°C, the DMN2990UFA-7B is ideal for various power management and signal processing applications.

DMN2990UFA-7B Features

  • High Input Capacitance: The DMN2990UFA-7B boasts a maximum input capacitance (Ciss) of 27.6 pF at 16V, ensuring fast switching and minimal signal distortion.
  • Low Gate Charge: With a maximum gate charge (Qg) of 0.5 nC at 4.5V, this MOSFET minimizes power loss during switching, improving overall efficiency.
  • Surface Mount Technology: The DMN2990UFA-7B is designed for surface mount applications, reducing footprint and enabling high-density integration in electronic devices.
  • Robust Power Dissipation: Capable of handling up to 400mW of power dissipation, this MOSFET is suitable for high-power applications.
  • Compliance with Industry Standards: The DMN2990UFA-7B is REACH unaffected, RoHS3 compliant, and moisture sensitivity level 1, making it an environmentally friendly and reliable choice.

DMN2990UFA-7B Applications

The DMN2990UFA-7B is ideal for a wide range of applications, including:

  • Power Management: Due to its high input capacitance and low gate charge, this MOSFET is perfect for power management circuits in consumer electronics, industrial equipment, and automotive systems.
  • Signal Processing: The DMN2990UFA-7B's high input capacitance and low gate charge make it an excellent choice for signal processing applications, such as audio amplifiers and filters.
  • Automotive Systems: This MOSFET's robust power dissipation and high drain-source voltage make it suitable for automotive systems, such as engine control units and infotainment systems.

Conclusion of DMN2990UFA-7B

The DMN2990UFA-7B is a versatile and high-performance MOSFET that offers excellent technical specifications and performance benefits. Its unique features, such as high input capacitance, low gate charge, and robust power dissipation, make it an ideal choice for various applications in power management, signal processing, and automotive systems. With its compliance with industry standards and commitment to environmental responsibility, the DMN2990UFA-7B is a reliable and eco-friendly solution for your electronic design needs.

FAQ

What is DMN2990UFA-7B?
DMN2990UFA-7B is a Single FETs, MOSFETs from Diodes Incorporated. This product page provides its main specifications, pricing information, availability, and inquiry options.
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Availability (In Stock : 16726 )
Quantity Unit Price Ext. Price
10+ $0.06452 $0.65
100+ $0.05172 $5.17
300+ $0.04531 $13.59
1000+ $0.04051 $40.51
5000+ $0.03604 $180.20
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