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SI7461DP-T1-E3

The SI7461DP-T1-E3 is a high voltage, high-power MOSFET from Vishay Siliconix. This N-channel MOSFET is designed for use in a variety of applications, including power switching, motor control, and power management.

Description:

The SI7461DP-T1-E3 is a surface-mount MOSFET with a drain-source voltage (VDS) of -100V and a continuous drain current (ID) of 4.6A. It has a low on-state resistance (RDS(on)) of 45mΩ max, which allows for efficient power switching with minimal power loss. The device also has a fast switching speed, with a typical gate charge (Qg) of 34nC and a gate-source threshold voltage (VGS(th)) of 2.5V min.

Features:

• High voltage, high-power MOSFET
• Drain-source voltage (VDS) of -100V
• Continuous drain current (ID) of 4.6A
• Low on-state resistance (RDS(on)) of 45mΩ max
• Fast switching speed with a typical gate charge (Qg) of 34nC and a gate-source threshold voltage (VGS(th)) of 2.5V min
• Surface-mount package for easy integration into a variety of applications

Applications:

The SI7461DP-T1-E3 is suitable for a wide range of applications that require high voltage and high power switching, including:

• Power switching in industrial and automotive systems
• Motor control in robotics and automation systems
• Power management in renewable energy systems, such as solar panels and wind turbines
• Battery management systems in electric vehicles and other battery-powered devices
• High-voltage power supplies for a variety of electronic devices

Overall, the SI7461DP-T1-E3 is a versatile and efficient MOSFET that can be used in a variety of high-power applications. Its high voltage and current ratings, low on-state resistance, and fast switching speed make it an excellent choice for power switching and management in a wide range of systems.