Vishay / Siliconix_SQ3426EV-T1_BE3

Vishay / Siliconix
SQ3426EV-T1_BE3  
Single FETs, MOSFETs

Vishay / Siliconix
SQ3426EV-T1_BE3
278-SQ3426EV-T1_BE3
Ersa
Vishay / Siliconix-SQ3426EV-T1_BE3-datasheets-12290941.pdf
MOSFET N-CHANNEL 60V 7A 6TSOP
In Stock : 12004

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SQ3426EV-T1_BE3 Description

The SQ3426EV-T1_BE3 is a high voltage, high-speed, N-channel power MOSFET from Vishay Siliconix. It is designed for use in a variety of power electronic applications, including motor control, power management, and power conversion.

Description:

The SQ3426EV-T1_BE3 is a surface-mount MOSFET that features a low on-state resistance (RDS(on)) and fast switching capabilities. It is available in a TO-220 package, which is suitable for use in a wide range of applications.

Features:

  • N-channel power MOSFET
  • High voltage, high-speed operation
  • Low on-state resistance (RDS(on))
  • Fast switching capabilities
  • Suitable for use in power electronic applications
  • Available in a TO-220 package

Applications:

The SQ3426EV-T1_BE3 is suitable for use in a variety of power electronic applications, including:

  • Motor control
  • Power management
  • Power conversion
  • Switch mode power supplies (SMPS)
  • Class D audio amplifiers
  • High voltage battery protection circuits

In summary, the SQ3426EV-T1_BE3 is a high voltage, high-speed N-channel power MOSFET from Vishay Siliconix that is designed for use in a variety of power electronic applications. It features a low on-state resistance and fast switching capabilities, making it suitable for use in motor control, power management, and power conversion applications, among others.

Tech Specifications

FET Type
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Product Status
Supplier Device Package
Drain to Source Voltage (Vdss)
Power Dissipation (Max)
Package / Case
Technology
Mfr
Vgs (Max)
RoHS Status
Moisture Sensitivity Level (MSL)
Operating Temperature
FET Feature
ECCN
Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Series
Qualification
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Base Product Number
Id - Continuous Drain Current
Channel Mode
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Maximum Operating Temperature
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

SQ3426EV-T1_BE3 Documents

Download datasheets and manufacturer documentation for SQ3426EV-T1_BE3

Ersa Automotive N-Channel 60 V (D-S) 175 °C MOSFET      
Ersa SQ3426EV-T1_xE3 obs 13/Jun/2023      

Shopping Guide

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