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SQ2361ES-T1_BE3

The SQ2361ES-T1_BE3 is a high voltage, high-speed N-channel MOSFET from Vishay Siliconix. It is designed for use in a variety of applications, including power switching, motor control, and high voltage switching.

Description:

The SQ2361ES-T1_BE3 is an N-channel MOSFET with a drain-source voltage (Vds) of -30V and a continuous drain current (Id) of 4.2A. It has a low on-state resistance (Rds(on)) of 3.5mOhm max, which allows for efficient power switching. The device also has a fast switching speed, with a typical gate charge (Qg) of 14nC and a gate-source threshold voltage (Vgs(th)) of -2.5V min.

Features:

• High voltage, high-speed operation
• Low on-state resistance for efficient power switching
• Fast switching speed for high performance applications
• Suitable for use in power switching, motor control, and high voltage switching applications

Applications:

• Power switching
• Motor control
• High voltage switching
• Industrial control
• Automotive systems

Overall, the SQ2361ES-T1_BE3 is a high performance MOSFET that offers high voltage and high speed operation, making it suitable for a range of applications. Its low on-state resistance and fast switching speed make it an ideal choice for power switching and motor control applications, while its high voltage rating makes it suitable for use in high voltage switching applications.