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DMN3135LVT-7

DMN3135LVT-7 Description

The DMN3135LVT-7 is a high-performance MOSFET (Metal Oxide) device manufactured by Diodes Incorporated, specifically designed for logic level gate applications. This device is part of the FET, MOSFET Arrays category and is currently active in the market. It is offered in a compact TSOT26 package, making it suitable for surface mount applications.

DMN3135LVT-7 Features

• FET Feature: Logic Level Gate
• Input Capacitance (Ciss) (Max) @ Vds: 305pF @ 15V
• Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 4.5V
• ECCN: EAR99
• Mounting Type: Surface Mount
• Product Status: Active
• Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Drain to Source Voltage (Vdss): 30V
• Technology: MOSFET (Metal Oxide)
• Power - Max: 840mW
• REACH Status: REACH Unaffected
• Mfr: Diodes Incorporated
• Current - Continuous Drain (Id) @ 25°C: 3.5A
• HTSUS: 8541.21.0095
• Package: Tape & Reel (TR)
• RoHS Status: ROHS3 Compliant
• Base Product Number: DMN3135
• Moisture Sensitivity Level (MSL): 1 (Unlimited)

The DMN3135LVT-7 stands out due to its low gate charge and input capacitance, which contribute to faster switching speeds and lower power consumption. Its low Rds On resistance and high continuous drain current capability make it ideal for high-current applications.

DMN3135LVT-7 Applications

The DMN3135LVT-7 is well-suited for a variety of applications where high performance and reliability are crucial. Some specific use cases include:

1. Power Management: Due to its high power handling capability, the DMN3135LVT-7 is ideal for power management circuits in consumer electronics and industrial equipment.
2. Motor Control: Its ability to handle high currents makes it suitable for motor control applications, such as in automotive and robotics systems.
3. Signal Processing: The device's low input capacitance and gate charge make it an excellent choice for signal processing circuits where high-speed switching is required.

Conclusion of DMN3135LVT-7

In conclusion, the DMN3135LVT-7 from Diodes Incorporated is a high-performance MOSFET designed for logic level gate applications. Its unique combination of low gate charge, low input capacitance, and high power handling capability make it an excellent choice for a wide range of applications, including power management, motor control, and signal processing. With its compact TSOT26 package and surface mount design, the DMN3135LVT-7 is a versatile and reliable solution for demanding electronic systems.