Diodes Incorporated_DMN62D0LFB-7
original

Diodes Incorporated
DMN62D0LFB-7

278-DMN62D0LFB-7
PDF Datasheet
MOSFET N-CH 60V 100MA 3DFN
8 Weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
26.4
Maximum Gate Source Leakage Current (nA)
2000
Input Capacitance (Ciss) (Max) @ Vds
32 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
0.45 nC @ 4.5 V
Typical Rise Time (ns)
3.4
PPAP
No
Channel Mode
Enhancement
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DMN62D0LFB-7 Description

DMN62D0LFB-7 Description

The DMN62D0LFB-7 is a high-performance MOSFET (Metal Oxide) device manufactured by Diodes Incorporated. This single N-Channel FET is designed for applications requiring low power dissipation and high efficiency. With a maximum drain-source voltage of 60V, continuous drain current of 100mA at 25°C, and a low on-resistance of 2Ω at 100mA and 4V gate-source voltage, the DMN62D0LFB-7 offers excellent performance in a compact 3DFN package.

DMN62D0LFB-7 Features

  • Low Power Dissipation: The DMN62D0LFB-7 has a maximum power dissipation of 470mW at ambient temperature, making it suitable for low-power applications.
  • High Input Capacitance: With a maximum input capacitance of 32pF at 25V, the device provides fast switching capabilities.
  • Low Gate Charge: The maximum gate charge is 0.45nC at 4.5V, reducing switching losses and improving efficiency.
  • Robust Voltage Ratings: The device can handle a maximum gate-source voltage of ±20V and a drain-source voltage of 60V.
  • Compliance: The DMN62D0LFB-7 is compliant with the REACH regulation and RoHS3 directive, ensuring environmental and health safety.
  • Moisture Sensitivity Level: With an MSL of 1, the device is suitable for applications with unlimited storage time before reflow soldering.

DMN62D0LFB-7 Applications

The DMN62D0LFB-7 is ideal for various applications where low power dissipation, high efficiency, and compact form factor are required. Some specific use cases include:

  • Portable Electronics: Due to its low power consumption, the DMN62D0LFB-7 is suitable for battery-powered devices like smartphones, tablets, and wearables.
  • Power Management: The device can be used in power management circuits for efficient power conversion and regulation.
  • Automotive Electronics: The DMN62D0LFB-7 can be employed in automotive applications, such as infotainment systems and lighting control, where reliability and efficiency are crucial.
  • Industrial Control: The device can be used in motor control and drive circuits for industrial automation systems.

Conclusion of DMN62D0LFB-7

The DMN62D0LFB-7 is a versatile and efficient MOSFET device that offers a combination of low power dissipation, high input capacitance, and robust voltage ratings. Its compact 3DFN package, compliance with environmental regulations, and moisture sensitivity level make it an ideal choice for a wide range of applications in portable electronics, power management, automotive electronics, and industrial control. The DMN62D0LFB-7's unique features and advantages over similar models make it a preferred choice for designers looking for high-performance and reliable solutions in their electronic systems.

FAQ

What package or case is DMN62D0LFB-7 available in?
DMN62D0LFB-7 is available in the 3-UFDFN package / case.
What is DMN62D0LFB-7?
Are there related or alternative parts for DMN62D0LFB-7?
What operating temperature range does DMN62D0LFB-7 support?
What is the mounting type of DMN62D0LFB-7?
Availability (In Stock : 5878 )
Quantity Unit Price Ext. Price
50+ $0.06324 $3.16
150+ $0.04904 $7.36
500+ $0.04426 $22.13
3000+ $0.04042 $121.26
6000+ $0.03850 $231.00
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