Diodes Incorporated_DMN63D8LDW-7
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Diodes Incorporated
DMN63D8LDW-7

289-DMN63D8LDW-7
PDF Datasheet
MOSFET 2N-CH 30V 0.22A SOT363
8 Weeks

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Tech Specifications

Configuration
2 N-Channel (Dual)
Typical Turn-Off Delay Time (ns)
12
Maximum Gate Source Leakage Current (nA)
10000
Input Capacitance (Ciss) (Max) @ Vds
22pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
0.87nC @ 10V
Typical Rise Time (ns)
3.2
PPAP
No
Channel Mode
Enhancement
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DMN63D8LDW-7 Description

DMN63D8LDW-7 Description

The DMN63D8LDW-7 is a high-performance MOSFET (Metal Oxide) device designed and manufactured by Diodes Incorporated. This 2N-channel device is housed in a compact SOT363 package, making it suitable for a wide range of applications where space is a premium. With a maximum drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 220mA at 25°C, the DMN63D8LDW-7 is capable of handling demanding power requirements.

DMN63D8LDW-7 Features

  • Logic Level Gate: The DMN63D8LDW-7 features a logic level gate, enabling compatibility with digital logic signals and simplifying integration into digital circuits.
  • Low Input Capacitance: With a maximum input capacitance (Ciss) of 22pF @ 25V, the DMN63D8LDW-7 offers fast switching speeds and low power consumption.
  • Low Gate Charge: The maximum gate charge (Qg) of 0.87nC @ 10V ensures efficient switching and reduced power dissipation.
  • Low Rds On: The maximum Rds On of 2.8Ohm @ 250mA, 10V contributes to low conduction losses and improved efficiency.
  • High Vgs(th): The maximum Vgs(th) of 1.5V @ 250µA ensures reliable operation and easy drive from logic levels.
  • Surface Mount: The DMN63D8LDW-7 is designed for surface mount applications, providing a compact and reliable solution for space-constrained designs.
  • Active Product Status: As an active product, the DMN63D8LDW-7 is readily available and supported by Diodes Incorporated.

DMN63D8LDW-7 Applications

The DMN63D8LDW-7 is ideal for a variety of applications where high performance and compact form factor are required. Some specific use cases include:

  • Power Management: Due to its high voltage and current ratings, the DMN63D8LDW-7 is well-suited for power management applications in consumer electronics, such as battery protection circuits and power converters.
  • Automotive Electronics: The DMN63D8LDW-7's robust performance makes it suitable for automotive applications, including motor control and lighting systems.
  • Industrial Control: In industrial control systems, the DMN63D8LDW-7 can be used for motor drives, relay control, and other high-power switching applications.

Conclusion of DMN63D8LDW-7

The DMN63D8LDW-7 from Diodes Incorporated is a versatile and high-performance MOSFET that offers a unique combination of features and benefits. Its compact SOT363 package, logic level gate, and low input capacitance make it an ideal choice for a wide range of applications, including power management, automotive electronics, and industrial control. With its active product status and support from a reputable manufacturer, the DMN63D8LDW-7 is a reliable and efficient solution for demanding power switching requirements.

FAQ

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The standard lead time for DMN63D8LDW-7 is 8 Weeks.
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Availability (In Stock : 26573 )
Quantity Unit Price Ext. Price
10+ $0.08484 $0.85
100+ $0.07043 $7.04
300+ $0.06323 $18.97
3000+ $0.05117 $153.51
6000+ $0.04685 $281.10
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