onsemi
BC857BTT1G  
Single Bipolar Transistors

onsemi
BC857BTT1G
276-BC857BTT1G
Ersa
onsemi-BC857BTT1G-datasheets-3357745.pdf
TRANS PNP 45V 0.1A SC75 SOT416
In Stock : 16197

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    BC857BTT1G Description

    The BC857BTT1G is a high-frequency NPN epitaxial planar transistor from ON Semiconductor. It is designed for a wide range of applications, including analog and digital circuits, audio and video signal processing, and high-speed switching.

    Description:

    The BC857BTT1G is an NPN transistor with a plastic package. It features a high-frequency design, making it suitable for use in circuits that require fast switching and high-frequency performance. The device is also designed for low-noise operation, making it ideal for use in sensitive audio and video circuits.

    Features:

    • High-frequency NPN transistor
    • Plastic package
    • Low-noise operation
    • Suitable for use in analog and digital circuits
    • Designed for use in audio and video signal processing
    • High-speed switching capability

    Applications:

    • Analog and digital circuits
    • Audio and video signal processing
    • High-speed switching
    • Amplifier circuits
    • Oscillator circuits
    • RF power amplifiers
    • Motor control circuits

    The BC857BTT1G is a versatile transistor that can be used in a wide range of applications. Its high-frequency design and low-noise operation make it a popular choice for use in sensitive circuits, while its high-speed switching capability makes it suitable for use in fast-switching applications. Whether you're designing an audio amplifier or a high-speed switching circuit, the BC857BTT1G is a reliable and high-performance option to consider.

    Tech Specifications

    Configuration
    PPAP
    Maximum Base Emitter Saturation Voltage (V)
    Product Status
    Voltage - Collector Emitter Breakdown (Max)
    Automotive
    Supplier Package
    Transistor Type
    Package / Case
    REACH Status
    Maximum Collector-Emitter Saturation Voltage (V)
    EU RoHS
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Collector Base Voltage (V)
    Frequency - Transition
    Current - Collector (Ic) (Max)
    ECCN
    Maximum Emitter Base Voltage (V)
    Mounting Type
    Standard Package Name
    Pin Count
    Mounting
    Lead Shape
    HTSUS
    Package
    Category
    PCB changed
    HTS
    Number of Elements per Chip
    Maximum Collector-Emitter Voltage (V)
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Package Height
    Mfr
    RoHS Status
    Maximum Transition Frequency (MHz)
    Vce Saturation (Max) @ Ib, Ic
    Material
    Package Length
    Series
    Type
    Minimum DC Current Gain
    Maximum DC Collector Current (A)
    Power - Max
    Part Status
    Current - Collector Cutoff (Max)
    Package Width
    Maximum Collector Cut-Off Current (nA)
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Base Product Number
    Unit Weight
    Continuous Collector Current
    RoHS
    Maximum DC Collector Current
    Technology
    Collector-Emitter Saturation Voltage
    Collector- Base Voltage VCBO
    Height
    Maximum Operating Temperature
    DC Collector/Base Gain hfe Min
    Width
    Mounting Style
    Transistor Polarity
    Minimum Operating Temperature
    Emitter- Base Voltage VEBO
    Length
    Gain Bandwidth Product fT
    Collector- Emitter Voltage VCEO Max
    Pd - Power Dissipation
    USHTS

    BC857BTT1G Documents

    Download datasheets and manufacturer documentation for BC857BTT1G

    Ersa Wafer Source Addition 26/Nov/2014      
    Ersa BC857(B,C)TT1      
    Ersa BC857(B,C)TT1      
    Ersa Copper Wire 29/Oct/2009      
    Ersa onsemi RoHS       Material Declaration BC857BTT1G       onsemi REACH      

    Shopping Guide

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