Diodes Incorporated_DMN63D8LDWQ-7
original

Diodes Incorporated
DMN63D8LDWQ-7

289-DMN63D8LDWQ-7
PDF Datasheet
MOSFET 2N-CH 30V 0.22A SOT363
8 weeks

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Tech Specifications

Configuration
2 N-Channel (Dual)
Typical Turn-Off Delay Time (ns)
12
Maximum Gate Source Leakage Current (nA)
10000
Input Capacitance (Ciss) (Max) @ Vds
22pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
0.87nC @ 10V
Typical Rise Time (ns)
3.2
PPAP
Yes
Channel Mode
Enhancement
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DMN63D8LDWQ-7 Description

DMN63D8LDWQ-7 Description

The DMN63D8LDWQ-7 is a high-performance MOSFET (Metal Oxide) device, manufactured by Diodes Incorporated. It is designed for automotive applications and offers superior performance in terms of power handling and switching speed. The device features a maximum drain-source voltage (Vdss) of 30V, a continuous drain current (Id) of 220mA at 25°C, and a maximum power dissipation of 300mW. The DMN63D8LDWQ-7 is packaged in a compact SOT363 package, making it suitable for surface-mount applications.

DMN63D8LDWQ-7 Features

  • Input Capacitance (Ciss): The DMN63D8LDWQ-7 has a maximum input capacitance of 22pF at 25V, ensuring fast switching and minimal signal distortion.
  • Gate Charge (Qg): With a maximum gate charge of 0.87nC at 10V, the device offers low switching losses and improved efficiency.
  • Rds On (Max): The maximum on-resistance (Rds On) is 2.8Ohm at 250mA and 10V, providing low conduction losses and high efficiency.
  • Vgs(th) (Max): The device has a maximum threshold voltage (Vgs(th)) of 1.5V at 250µA, ensuring reliable operation and easy control.
  • Moisture Sensitivity Level (MSL): The DMN63D8LDWQ-7 has an MSL of 1, indicating unlimited storage time before reflow soldering.
  • REACH Status: The device is REACH unaffected, ensuring compliance with European environmental regulations.
  • RoHS Status: The DMN63D8LDWQ-7 is RoHS3 compliant, making it suitable for environmentally friendly applications.

DMN63D8LDWQ-7 Applications

The DMN63D8LDWQ-7 is ideal for a wide range of automotive and industrial applications, including:

  • Power Management: The device's high power handling and low on-resistance make it suitable for power management circuits in automotive systems.
  • Motor Control: The DMN63D8LDWQ-7 can be used in motor control applications, such as electric windows and power seats, due to its high current handling and fast switching capabilities.
  • Signal Processing: The low input capacitance and fast switching speed of the device make it suitable for signal processing applications in automotive infotainment systems.
  • Protection Circuits: The DMN63D8LDWQ-7 can be used in protection circuits, such as overvoltage and overcurrent protection, due to its high voltage and current ratings.

Conclusion of DMN63D8LDWQ-7

The DMN63D8LDWQ-7 is a versatile and high-performance MOSFET device, offering excellent power handling, switching speed, and efficiency. Its compact SOT363 package and automotive-grade performance make it an ideal choice for a wide range of applications in the automotive and industrial sectors. With its unique combination of features and advantages, the DMN63D8LDWQ-7 stands out as a superior solution for demanding applications where reliability and performance are critical.

FAQ

Is DMN63D8LDWQ-7 currently in stock?
Yes. DMN63D8LDWQ-7 currently shows 2090 unit(s) in stock.
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Availability (In Stock : 2090 )
Quantity Unit Price Ext. Price
5+ $0.11399 $0.57
50+ $0.09120 $4.56
150+ $0.07981 $11.97
500+ $0.07128 $35.64
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