Diodes Incorporated_DMN66D0LDW-7
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Diodes Incorporated
DMN66D0LDW-7

289-DMN66D0LDW-7
PDF Datasheet
MOSFET 2N-CH 60V 0.115A SOT363
8 Weeks

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Tech Specifications

Configuration
2 N-Channel (Dual)
Typical Turn-Off Delay Time (ns)
33
Input Capacitance (Ciss) (Max) @ Vds
23pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
-
PPAP
No
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
10
Product Status
Active
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DMN66D0LDW-7 Description

DMN66D0LDW-7 Description

The DMN66D0LDW-7 is a high-performance MOSFET (Metal Oxide) device manufactured by Diodes Incorporated, designed for use in various electronic applications requiring efficient power management and control. This device is part of the FET, MOSFET Arrays category and is specifically tailored for automotive applications. With a maximum drain-to-source voltage (Vdss) of 60V, it offers robust performance in high-voltage environments. The DMN66D0LDW-7 is compliant with the latest environmental regulations, including ROHS3 and REACH, ensuring its suitability for a wide range of applications.

DMN66D0LDW-7 Features

  • Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V - This low capacitance value contributes to the device's fast switching capabilities, reducing power loss and improving overall efficiency.
  • Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 5V - The low on-resistance ensures minimal power dissipation, making it ideal for applications where energy efficiency is critical.
  • Vgs(th) (Max) @ Id: 2V @ 250µA - The high threshold voltage allows for stable operation in various electronic circuits.
  • Power - Max: 250mW (Ta) - This high power rating enables the device to handle demanding applications without compromising performance.
  • Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) - The device can handle continuous drain currents up to 115mA, making it suitable for a wide range of applications.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited) - This indicates that the device can be stored and handled without special precautions, simplifying the manufacturing process.

DMN66D0LDW-7 Applications

The DMN66D0LDW-7 is an ideal choice for applications that require high-voltage, low-power, and efficient switching capabilities. Some specific use cases include:

  • Automotive Electronics: Due to its automotive grade and high-voltage rating, the DMN66D0LDW-7 is well-suited for use in automotive electronics, such as power windows, seat controls, and lighting systems.
  • Industrial Control Systems: The device's robust performance and low power dissipation make it ideal for use in industrial control systems, where reliability and efficiency are critical.
  • Power Management: The DMN66D0LDW-7 can be used in power management applications, such as voltage regulation and power distribution, where high-voltage and low-power requirements are necessary.

Conclusion of DMN66D0LDW-7

The DMN66D0LDW-7 is a versatile and high-performance MOSFET device that offers a unique combination of high-voltage capabilities, low power dissipation, and fast switching speeds. Its automotive grade, compliance with environmental regulations, and robust performance make it an ideal choice for a wide range of applications, particularly in the automotive and industrial sectors. With its unique features and advantages over similar models, the DMN66D0LDW-7 stands out as a reliable and efficient solution for demanding electronic applications.

FAQ

What is DMN66D0LDW-7?
DMN66D0LDW-7 is a FET, MOSFET Arrays from Diodes Incorporated. This product page provides its main specifications, pricing information, availability, and inquiry options.
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