


STMicroelectronics
PD20010S-E
285-PD20010S-E
10W 13.6V 2GHz LDMOS in PowerSO-10RF plastic package
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Responsible qualityTech Specifications
Continuous Drain Current (ID)
5A
Drain to Source Breakdown Voltage
40V
Drain to Source Voltage (Vdss)
40V
Frequency
2GHz
Gain
11dB
Gate to Source Voltage (Vgs)
15V
Max Frequency
1GHz
Max Operating Temperature
165°C
PD20010S-E Description
RF Mosfet 13.6 V 150 mA 2GHz 11dB 10W PowerSO-10RF (Straight Lead)
FAQ
What package or case is PD20010S-E available in?
PD20010S-E is available in the 50 package / case.
What voltage specification is listed for PD20010S-E?
Is PD20010S-E currently in stock?
What operating temperature range does PD20010S-E support?
What is the mounting type of PD20010S-E?



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