STMicroelectronics_PD85006L-E
original

STMicroelectronics
PD85006L-E

285-PD85006L-E
PDF Datasheet
870MHz 6W LDMOS RF Transistor, 40V, 2A, N-CH, Surface Mount

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Tech Specifications

Continuous Drain Current (ID)
2A
Drain to Source Breakdown Voltage
40V
Drain to Source Voltage (Vdss)
40V
Frequency
870MHz
Gain
17dB
Gate to Source Voltage (Vgs)
15V
Lead Free
Lead Free
Max Frequency
1GHz
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PD85006L-E Description

RF Mosfet 13.6 V 200 mA 870MHz 17dB 5W PowerFLAT™ (5x5)

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