STMicroelectronics_PD20010-E
original

STMicroelectronics
PD20010-E

285-PD20010-E
10W 13.6V 2GHz LDMOS in PowerSO-10RF plastic package

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Tech Specifications

Continuous Drain Current (ID)
5A
Current Rating
5A
Drain to Source Breakdown Voltage
40V
Drain to Source Voltage (Vdss)
40V
Frequency
2GHz
Gain
11dB
Gate to Source Voltage (Vgs)
15V
Max Frequency
1GHz
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PD20010-E Description

PD20010-E Description

The PD20010-E from STMicroelectronics is an LDMOS-based RF MOSFET designed for high-frequency power amplification applications. Operating at 2GHz with a rated voltage of 40V and a current rating of 5A, this device delivers 10W output power and 11dB gain, making it suitable for demanding RF environments. Tested at 13.6V and 150mA, it ensures reliable performance under specified conditions. The PWRSO-10RF package offers robust thermal and electrical characteristics, while its ROHS3 compliance and REACH unaffected status align with environmental regulations. Although marked as obsolete, its LDMOS technology provides superior efficiency and linearity compared to traditional MOSFETs, making it a legacy component for specialized applications.

PD20010-E Features

  • High-Frequency Operation: Optimized for 2GHz applications, ideal for RF power stages.
  • LDMOS Technology: Delivers higher efficiency, thermal stability, and linearity vs. standard MOSFETs.
  • Power Output: 10W capability with 11dB gain for robust signal amplification.
  • Environmental Compliance: ROHS3 compliant and REACH unaffected, meeting industry standards.
  • Robust Packaging: PWRSO-10RF (tube packaging) ensures mechanical durability and thermal performance.
  • Legacy Performance: Despite being obsolete, retains value in niche applications due to its proven reliability.

PD20010-E Applications

  • RF Power Amplifiers: Base stations, repeaters, and transmitters requiring high gain and efficiency.
  • Military & Aerospace: Radar and communication systems benefiting from LDMOS ruggedness.
  • Industrial RF Equipment: Used in ISM band applications (e.g., 2GHz industrial heating).
  • Legacy System Maintenance: Supports retrofit or repair of older RF infrastructure.

Conclusion of PD20010-E

The PD20010-E is a high-performance LDMOS RF MOSFET offering 10W output, 11dB gain, and 2GHz operation, tailored for critical RF amplification tasks. While obsolete, its thermal efficiency, linearity, and compliance make it a preferred choice for military, industrial, and legacy systems. Engineers seeking reliable, high-power RF solutions in constrained environments will find this device exceptionally capable.

FAQ

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Yes. PD20010-E currently shows 4697 unit(s) in stock.
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