STMicroelectronics_PD84008-E
original

STMicroelectronics
PD84008-E

285-PD84008-E
PDF Datasheet
RF Power LDMOS transistor

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Tech Specifications

Continuous Drain Current (ID)
7A
Drain to Source Breakdown Voltage
25V
Drain to Source Voltage (Vdss)
25V
Frequency
870MHz
Gain
16.2dB
Gate to Source Voltage (Vgs)
15V
Max Frequency
1GHz
Max Operating Temperature
165°C
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PD84008-E Description

RF Mosfet 7.5 V 250 mA 870MHz 16.2dB 2W PowerSO-10RF (Formed Lead)

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