The PD84010-E from STMicroelectronics is an LDMOS-based RF MOSFET designed for high-performance RF amplification applications. Operating at 870MHz with a rated voltage of 40V and a current rating of 8A, this component delivers 2W output power and achieves a 16.3dB gain, making it suitable for demanding RF signal amplification tasks. Tested at 7.5V and 300mA, it ensures reliable performance under specified conditions. The device is housed in a PWRSO-10RF package and supplied in a tube, adhering to ROHS3 compliance and REACH unaffected standards. Although marked as obsolete, its robust design and Moisture Sensitivity Level (MSL) 3 (168 hours) rating ensure stability in storage and handling.
The PD84010-E stands out as a high-performance LDMOS RF MOSFET, offering exceptional gain, power efficiency, and thermal stability for critical RF applications. While obsolete, its tested reliability, compliance, and optimized frequency performance make it a viable choice for legacy systems or specific upgrades. Engineers in telecom, broadcasting, and industrial RF sectors can leverage its strengths for robust signal amplification where newer alternatives may not be compatible.
Download datasheets and manufacturer documentation for PD84010-E